Abstract: A sound suppressing gun barrel incorporating a bullet channel having breachward and muzzleward ends; at least a first “U” channel positioned radially outwardly from the bullet channel, the at least first “U” channel having a web, having a gas receiving arm extending muzzlewardly from the web, and having first and second gas conveying arms extending muzzlewardly from opposite ends of the web; the sound suppressing gun barrel further having an inlet port opening the at least first “U” channel at a muzzleward end of the at least first “U” channel's first gas conveying arm, the inlet port communicating with the bullet channel; the sound suppressing gun barrel further having an outlet port further opening the at least first “U” channel, the outlet port being positioned at a muzzleward end of the at least first “U” channel's second gas conveying arm.

Abstract: A gun barrel sound suppressor incorporating a housing having a breach end, a muzzle end, and a barrel axis extending between those ends; a bullet passage conduit aligned with the barrel axis; a first annular gas outlet port opening the bullet passage conduit; a first annular gas inlet port further opening the bullet passage conduit, the first annular gas inlet port being positioned muzzlewardly from the first annular gas outlet port; a first circumferentially extending “U” channel having a web, having a breachward arm having a distal end, and having a muzzleward arm having a distal end, wherein the distal end of the first breachward arm communicates with the first annular gas outlet port, and wherein the distal end of the first muzzleward arm communicates with the first annular gas inlet port.

Abstract: A sound suppressing gun barrel incorporating a bullet channel having breachward and muzzleward ends; at least a first “U” channel positioned radially outwardly from the bullet channel, the at least first “U” channel having a web, having a gas receiving arm extending muzzlewardly from the web, and having first and second gas conveying arms extending muzzlewardly from opposite ends of the web; the sound suppressing gun barrel further having an inlet port opening the at least first “U” channel at a muzzleward end of the at least first “U” channel's first gas conveying arm, the inlet port communicating with the bullet channel; the sound suppressing gun barrel further having an outlet port further opening the at least first “U” channel, the outlet port being positioned at a muzzleward end of the at least first “U” channel's second gas conveying arm.

Abstract: A gun barrel sound suppressor incorporating a housing having a breach end, a muzzle end, and a barrel axis extending between those ends; a bullet passage conduit aligned with the barrel axis; a first annular gas outlet port opening the bullet passage conduit; a first annular gas inlet port further opening the bullet passage conduit, the first annular gas inlet port being positioned muzzlewardly from the first annular gas outlet port; a first circumferentially extending “U” channel having a web, having a breachward arm having a distal end, and having a muzzleward arm having a distal end, wherein the distal end of the first breachward arm communicates with the first annular gas outlet port, and wherein the distal end of the first muzzleward arm communicates with the first annular gas inlet port.

Abstract: A gun barrel for guiding a bullet along a longitudinal axis, the bullet having a diameter, the gun barrel having a circumferential series of lands, each land among the circumferential series of lands being radially displaced from the longitudinal axis a distance at least as great as one-half of the bullet's diameter, each land extending helically about the longitudinal axis; a plurality of sound reflection chambers, each sound reflection chambers among the plurality of sound reflection chambers being positioned between an adjacent pair of lands among the circumferential series of lands, each sound reflection chamber having a muzzle end, and each sound reflection chamber opening radially inwardly; and a plurality of sound reflection walls, each wall among the plurality of sound reflection walls closing one of the sound reflection chambers' muzzle ends.

Abstract: A gun barrel for guiding a bullet along a longitudinal axis, the bullet having a diameter, the gun barrel having a circumferential series of lands, each land among the circumferential series of lands being radially displaced from the longitudinal axis a distance at least as great as one-half of the bullet's diameter, each land extending helically about the longitudinal axis; a plurality of sound reflection chambers, each sound reflection chambers among the plurality of sound reflection chambers being positioned between an adjacent pair of lands among the circumferential series of lands, each sound reflection chamber having a muzzle end, and each sound reflection chamber opening radially inwardly; and a plurality of sound reflection walls, each wall among the plurality of sound reflection walls closing one of the sound reflection chambers' muzzle ends.

Abstract: A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material.

Abstract: A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material.