Patents by Inventor Jeff Anthis

Jeff Anthis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9028917
    Abstract: A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: May 12, 2015
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Rajesh Odedra, Neil Boag, Jeff Anthis, Ravi Kanjolia
  • Patent number: 8927748
    Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted ?3-allyl)(carbonyl)metal complexes.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: January 6, 2015
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Rajesh Odedra, Neil Boag, Jeff Anthis, Ravi Kanjolia, Mark Saly
  • Publication number: 20130041170
    Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted ?3-allyl)(carbonyl)metal complexes.
    Type: Application
    Filed: August 8, 2012
    Publication date: February 14, 2013
    Applicant: Sigma-Aldrich Co. LLC
    Inventors: Rajesh Odedra, Neil Boag, Jeff Anthis, Ravi Kanjolia, Mark Saly
  • Publication number: 20120177845
    Abstract: A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.
    Type: Application
    Filed: July 27, 2010
    Publication date: July 12, 2012
    Applicant: Sigma-Aldrich Co. LLC
    Inventors: Rajesh Odedra, Neil Boag, Jeff Anthis, Ravi Kanjolia
  • Publication number: 20110165780
    Abstract: A method of forming ruthenium-containing films by atomic layer deposition is provided. The method comprises delivering at least one precursor to a substrate, the at least one precursor corresponding in structure to Formula I: (L)Ru(CO)3 wherein L is selected from the group consisting of a linear or branched C2-C6-alkenyl and a linear or branched C1-6-alkyl; and wherein L is optionally substituted with one or more substituents independently selected from the group consisting of C2-C6-alkenyl, C1-6-alkyl, alkoxy and NR1R2; wherein R1 and R2 are independently alkyl or hydrogen.
    Type: Application
    Filed: May 29, 2009
    Publication date: July 7, 2011
    Applicant: Sigma-Aldrich Co.
    Inventors: Ravi Kanjolia, Rajesh Odedra, Jeff Anthis, Neil Boag