Patents by Inventor Jeff Babock

Jeff Babock has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7087507
    Abstract: A structure and method passivates dangling silicon bonds by the introduction of deuterium into a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) by ion implantation. The process of implantation provides precise placement of deuterium at optimum locations within the gate stack to create stable silicon-deuterium bond terminations at the Si—SiO2 interface within the gate-channel region. The deuterium is encapsulated in the MOSFET by the use of a Silicon Nitride (SiN) barrier mask. The ability of deuterium to passivate dangling silicon bonds is maximized by removing hydrogen present in the MOSFET and by use of an absorption layer to create a deuterium rich region.
    Type: Grant
    Filed: May 17, 2004
    Date of Patent: August 8, 2006
    Assignee: PDF Solutions, Inc.
    Inventors: Viktor Koldiaev, Jeff Babock, George Cheroff
  • Publication number: 20050255684
    Abstract: A structure and method passivates dangling silicon bonds by the introduction of deuterium into a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) by ion implantation. The process of implantation provides precise placement of deuterium at optimum locations within the gate stack to create stable silicon-deuterium bond terminations at the Si—SiO2 interface within the gate-channel region. The deuterium is encapsulated in the MOSFET by the use of a Silicon Nitride (SiN) barrier mask. The ability of deuterium to passivate dangling silicon bonds is maximized by removing hydrogen present in the MOSFET and by use of an absorption layer to create a deuterium rich region.
    Type: Application
    Filed: May 17, 2004
    Publication date: November 17, 2005
    Inventors: Viktor Koldiaev, Jeff Babock, George Cheroff