Patents by Inventor Jeff Bogart

Jeff Bogart has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of a silicon structure and deep silicon etch with profile control
    Patent number: 9865472
    Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: January 9, 2018
    Assignee: Lam Research Corporation
    Inventors: Robert Chebi, Frank Lin, Jaroslaw W. Winniczek, Wan-Lin Chen, Erin Moore, Lily Zheng, Stephan Lassig, Jeff Bogart, Camelia Rusu
  • FABRICATION OF A SILICON STRUCTURE AND DEEP SILICON ETCH WITH PROFILE CONTROL
    Publication number: 20160233102
    Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
    Type: Application
    Filed: April 20, 2016
    Publication date: August 11, 2016
    Inventors: Robert CHEBI, Frank LIN, Jaroslaw W. WINNICZEK, Wan-Lin CHEN, Erin MOORE, Lily ZHENG, Stephan LASSIG, Jeff BOGART, Camelia RUSU
  • Fabrication of a silicon structure and deep silicon etch with profile control
    Patent number: 9330926
    Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: May 3, 2016
    Assignee: Lam Research Corporation
    Inventors: Robert Chebi, Frank Lin, Jaroslaw W. Winniczek, Wan-Lin Chen, Erin McDonnell, Lily Zheng, Stephan Lassig, Jeff Bogart, Camelia Rusu
  • FABRICATION OF A SILICON STRUCTURE AND DEEP SILICON ETCH WITH PROFILE CONTROL
    Publication number: 20090184089
    Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.
    Type: Application
    Filed: December 18, 2008
    Publication date: July 23, 2009
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Robert CHEBI, Frank LIN, Jaroslaw W. WINNICZEK, Wan-Lin CHEN, Erin MCDONNELL, Lily ZHENG, Stephan LASSIG, Jeff BOGART, Camelia RUSU
  • Techniques for improving etch rate uniformity
    Patent number: 6344105
    Abstract: Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.
    Type: Grant
    Filed: June 30, 1999
    Date of Patent: February 5, 2002
    Assignee: Lam Research Corporation
    Inventors: John E. Daugherty, Neil Benjamin, Jeff Bogart, Vahid Vahedi, David Cooperberg, Alan Miller, Yoko Yamaguchi