Patents by Inventor Jeff Bogart
Jeff Bogart has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9865472Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.Type: GrantFiled: April 20, 2016Date of Patent: January 9, 2018Assignee: Lam Research CorporationInventors: Robert Chebi, Frank Lin, Jaroslaw W. Winniczek, Wan-Lin Chen, Erin Moore, Lily Zheng, Stephan Lassig, Jeff Bogart, Camelia Rusu
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Publication number: 20160233102Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.Type: ApplicationFiled: April 20, 2016Publication date: August 11, 2016Inventors: Robert CHEBI, Frank LIN, Jaroslaw W. WINNICZEK, Wan-Lin CHEN, Erin MOORE, Lily ZHENG, Stephan LASSIG, Jeff BOGART, Camelia RUSU
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Patent number: 9330926Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.Type: GrantFiled: December 18, 2008Date of Patent: May 3, 2016Assignee: Lam Research CorporationInventors: Robert Chebi, Frank Lin, Jaroslaw W. Winniczek, Wan-Lin Chen, Erin McDonnell, Lily Zheng, Stephan Lassig, Jeff Bogart, Camelia Rusu
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Publication number: 20150279621Abstract: An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.Type: ApplicationFiled: June 4, 2015Publication date: October 1, 2015Applicant: LAM RESEARCH CORPORATIONInventors: Daniel Arthur Brown, Jeff A. Bogart, Ian J. Kenworthy
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Patent number: 9076634Abstract: An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.Type: GrantFiled: September 10, 2010Date of Patent: July 7, 2015Assignee: Lam Research CorporationInventors: Daniel Arthur Brown, Jeff A. Bogart, Ian J. Kenworthy
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Patent number: 8524099Abstract: Methods for processing events occurring in a process chamber are provided. In one method, an operation includes carrying gas and receiving an optical signal from the process chamber to an analysis tool that operates in response to the optical signal having a signal-to-noise ratio (SNR) for process analysis. And, dividing the carried gas and optical signal into a plurality of separate gas and optical signals between the process chamber and the analysis tool. The dividing is configured through separate apertures so that the apertures collectively maintain the SNR of the optical signal received at the tool. Methods provide a septum in a second bore dividing the second bore into apertures configured to reduce etching of and deposition on the optical access window and to maintain the desired SNR at the diagnostic end point.Type: GrantFiled: January 7, 2011Date of Patent: September 3, 2013Assignee: Lam Research CorporationInventors: Jeff A. Bogart, Leonard Sharpless, Harmeet Singh
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Publication number: 20110103805Abstract: Methods for processing events occurring in a process chamber are provided. In one method, an operation includes carrying gas and receiving an optical signal from the process chamber to an analysis tool that operates in response to the optical signal having a signal-to-noise ratio (SNR) for process analysis. And, dividing the carried gas and optical signal into a plurality of separate gas and optical signals between the process chamber and the analysis tool. The dividing is configured through separate apertures so that the apertures collectively maintain the SNR of the optical signal received at the tool. Methods provide a septum in a second bore dividing the second bore into apertures configured to reduce etching of and deposition on the optical access window and to maintain the desired SNR at the diagnostic end point.Type: ApplicationFiled: January 7, 2011Publication date: May 5, 2011Inventors: Jeff A. Bogart, Leonard Sharpless, Harmeet Singh
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Patent number: 7928366Abstract: An injector provides optical access into a process chamber along an axial path from a diagnostic end point outside the process chamber through an optical access window. A hollow housing body receives first and second process gases, and surrounds the axial path. A sleeve in the body is urged against the body to minimize particle generation, and defines a first gas bore injecting the first process gas into the process chamber. A second gas bore of the sleeve surrounds the axial path for injecting the second process gas into the process chamber, allowing an optical signal to have a desired signal-to-noise ratio (SNR) at the end point. Methods provide a septum in the second bore dividing the second bore into apertures configured to reduce etching of and deposition on the optical access window and to maintain the desired SNR at the diagnostic end point.Type: GrantFiled: October 6, 2006Date of Patent: April 19, 2011Assignee: Lam Research CorporationInventors: Jeff A. Bogart, Leonard Sharpless, Harmeet Singh
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Publication number: 20110056626Abstract: An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.Type: ApplicationFiled: September 10, 2010Publication date: March 10, 2011Applicant: Lam Research CorporationInventors: Daniel Arthur Brown, Jeff A. Bogart, Ian J. Kenworthy
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Publication number: 20090184089Abstract: A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.Type: ApplicationFiled: December 18, 2008Publication date: July 23, 2009Applicant: LAM RESEARCH CORPORATIONInventors: Robert CHEBI, Frank LIN, Jaroslaw W. WINNICZEK, Wan-Lin CHEN, Erin MCDONNELL, Lily ZHENG, Stephan LASSIG, Jeff BOGART, Camelia RUSU
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Publication number: 20080083883Abstract: An injector provides optical access into a process chamber along an axial path from a diagnostic end point outside the process chamber through an optical access window. A hollow housing body receives first and second process gases, and surrounds the axial path. A sleeve in the body is urged against the body to minimize particle generation, and defines a first gas bore injecting the first process gas into the process chamber. A second gas bore of the sleeve surrounds the axial path for injecting the second process gas into the process chamber, allowing an optical signal to have a desired signal-to-noise ratio (SNR) at the end point. Methods provide a septum in the second bore dividing the second bore into apertures configured to reduce etching of and deposition on the optical access window and to maintain the desired SNR at the diagnostic end point.Type: ApplicationFiled: October 6, 2006Publication date: April 10, 2008Applicant: LAM RESEARCH CORPORATIONInventors: Jeff A. Bogart, Leonard Sharpless, Harmeet Singh
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Patent number: 7201829Abstract: The present invention includes a mask plate design that includes at least one or a plurality of channels portions on a surface of the mask plate, into which electrolyte solution will accumulate when the mask plate surface is disposed on a surface of wafer, and out of which the electrolyte solution will freely flow. There are also at least one or a plurality of polish portions on the mask plate surface that allow for polishing of the wafer when the mask plate surface is disposed on a surface of wafer.Type: GrantFiled: September 20, 2001Date of Patent: April 10, 2007Assignee: Novellus Systems, Inc.Inventors: Bulent M. Basol, Cyprian Uzoh, Jeff A. Bogart
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Publication number: 20020121445Abstract: The present invention includes a mask plate design that includes at least one or a plurality of channels portions on a surface of the mask plate, into which electrolyte solution will accumulate when the mask plate surface is disposed on a surface of wafer, and out of which the electrolyte solution will freely flow. There are also at least one or a plurality of polish portions on the mask plate surface that allow for polishing of the wafer when the mask plate surface is disposed on a surface of wafer.Type: ApplicationFiled: September 20, 2001Publication date: September 5, 2002Inventors: Bulent M. Basol, Cyprian Uzoh, Jeff A. Bogart
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Patent number: 6344105Abstract: Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.Type: GrantFiled: June 30, 1999Date of Patent: February 5, 2002Assignee: Lam Research CorporationInventors: John E. Daugherty, Neil Benjamin, Jeff Bogart, Vahid Vahedi, David Cooperberg, Alan Miller, Yoko Yamaguchi