Abstract: A single layer capacitor can include a substrate having a first surface and a second surface opposite the first surface. A resistive layer can be formed over at least a portion of the first surface of the substrate. A first conductive layer can be formed over at least a portion of the resistive layer. A second conductive layer can be formed over at least a portion of the second surface of the substrate. As such, the single layer capacitor can include a resistor and a capacitor formed in series with one another.

Abstract: A semiconductor-based capacitor can include a substrate including a semiconductor material, an oxide layer formed over the substrate, a conductive layer formed over at least a portion of the oxide layer, a plurality of distinct coplanar upper terminals, and a lower terminal. The upper terminals and the lower terminal can be exposed along the top and bottom surfaces of the substrate, respectively, for embedding the capacitor in a substrate such as a circuit board. The semiconductor-based capacitor can be sufficiently miniaturized to be embeddable within a circuit board while providing superior capacitance values without compromising the integrity of the capacitor. For example, each of the upper terminals can have a maximum width and a thickness normal to the maximum width, and a ratio of the width to the thickness can be greater than about 80:1 to prevent physical damage to the capacitor from warping or cracking.

Abstract: A heat sink component can include a body including a thermally conductive material that is electrically non-conductive, a lower conductive layer formed over a bottom surface of the body and electrically connected with the ground plane layer, and an upper conductive layer formed over a top surface of the body. The heat sink component can have a length in an X-direction that is parallel with the top surface of the body and a thickness in a direction perpendicular to the top surface. A ratio of the length to the thickness can be greater than about 7.

Abstract: A heat sink component can include a body including a thermally conductive material that is electrically non-conductive, a lower conductive layer formed over a bottom surface of the body and electrically connected with the ground plane layer, and an upper conductive layer formed over a top surface of the body. The heat sink component can have a length in an X-direction that is parallel with the top surface of the body and a thickness in a direction perpendicular to the top surface. A ratio of the length to the thickness can be greater than about 7.

Abstract: A semiconductor-based capacitor can include a substrate including a semiconductor material, an oxide layer formed on a surface of the substrate, a conductive layer formed over at least a portion of the oxide layer, a plurality of distinct coplanar upper terminals, and at least one lower terminal formed. Each of the upper terminals and the at least one lower terminal can be exposed along the top and bottom surfaces of the substrate, respectively, for embedding the capacitor in a substrate such as a circuit board. The semiconductor-based capacitor can be sufficiently miniaturized to be embeddable within a circuit board while providing superior capacitance values. For example, a ratio of the length to the width of the substrate can be in a range from about 3:1 to about 1:3 and an area of the substrate can be less than about 3 mm2.

Abstract: Components, methods of forming components, and methods of assembling components on an electronic device are provided. For example, a method of forming a component includes providing a first substrate having a first surface, a second surface opposite the first surface along a height direction, and an initial thickness from the first surface to the second surface along the height direction; forming one or more vias in the first substrate, each via extending from the first surface to the second surface of the first substrate; depositing one or more conductive pathways on the first surface of the first substrate; plating the one or more vias; disposing a second substrate on the first surface of the first substrate to form a component sandwich; processing the second surface of the first substrate to reduce a thickness of the component sandwich; and forming one or more contact pads on the first substrate.

Abstract: A single layer capacitor can include a substrate having a first surface and a second surface opposite the first surface. A resistive layer can be formed over at least a portion of the first surface of the substrate. A first conductive layer can be formed over at least a portion of the resistive layer. A second conductive layer can be formed over at least a portion of the second surface of the substrate. As such, the single layer capacitor can include a resistor and a capacitor formed in series with one another.

Abstract: A metal-oxide-semiconductor (MOS) capacitor can include a substrate comprising a semiconductor material, an oxide layer formed over a first surface of the substrate, a resistive layer formed over at least a portion of the oxide layer, and a conductive layer formed over at least a portion of the resistive layer. As such, the MOS capacitor can include a resistor and a capacitor formed in series with one another.

Abstract: A single layer capacitor can include a substrate having a first surface and a second surface opposite the first surface. A resistive layer can be formed over at least a portion of the first surface of the substrate. A first conductive layer can be formed over at least a portion of the resistive layer. A second conductive layer can be formed over at least a portion of the second surface of the substrate. As such, the single layer capacitor can include a resistor and a capacitor formed in series with one another.

Abstract: A metal-oxide-semiconductor (MOS) capacitor can include a substrate comprising a semiconductor material, an oxide layer formed over a first surface of the substrate, a resistive layer formed over at least a portion of the oxide layer, and a conductive layer formed over at least a portion of the resistive layer. As such, the MOS capacitor can include a resistor and a capacitor formed in series with one another.

Abstract: A heat sink component can include a body including a thermally conductive material that is electrically non-conductive, a lower conductive layer formed over a bottom surface of the body and electrically connected with the ground plane layer, and an upper conductive layer formed over a top surface of the body. The heat sink component can have a length in an X-direction that is parallel with the top surface of the body and a thickness in a direction perpendicular to the top surface. A ratio of the length to the thickness can be greater than about 7.

Abstract: A semiconductor-based capacitor can include a substrate including a semiconductor material, an oxide layer formed on a surface of the substrate, a conductive layer formed over at least a portion of the oxide layer, a plurality of distinct coplanar upper terminals, and at least one lower terminal formed. Each of the upper terminals and the at least one lower terminal can be exposed along the top and bottom surfaces of the substrate, respectively, for embedding the capacitor in a substrate such as a circuit board. The semiconductor-based capacitor can be sufficiently miniaturized to be embeddable within a circuit board while providing superior capacitance values. For example, a ratio of the length to the width of the substrate can be in a range from about 3:1 to about 1:3 and an area of the substrate can be less than about 3 mm2.

Abstract: A semiconductor-based capacitor can include a substrate including a semiconductor material, an oxide layer formed over the substrate, a conductive layer formed over at least a portion of the oxide layer, a plurality of distinct coplanar upper terminals, and a lower terminal. The upper terminals and the lower terminal can be exposed along the top and bottom surfaces of the substrate, respectively, for embedding the capacitor in a substrate such as a circuit board. The semiconductor-based capacitor can be sufficiently miniaturized to be embeddable within a circuit board while providing superior capacitance values without compromising the integrity of the capacitor. For example, each of the upper terminals can have a maximum width and a thickness normal to the maximum width, and a ratio of the width to the thickness can be greater than about 80:1 to prevent physical damage to the capacitor from warping or cracking.