Patents by Inventor Jeff C. Johnson

Jeff C. Johnson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8688496
    Abstract: A system and method for transferring articles such as, for example, airline transfer bags, according to which, in several exemplary embodiments, the articles are transferred from an arrival gate of an inbound flight to one or more departure gates of connecting flights.
    Type: Grant
    Filed: January 7, 2009
    Date of Patent: April 1, 2014
    Assignee: American Airlines, Inc.
    Inventors: Pongsakon Tansupaswatdikul, Alejandro Scalise, Tuell C. Green, James T. Diamond, Murali Ande, Jeff C. Johnson
  • Patent number: 6960767
    Abstract: A method and apparatus for measuring the dimensions of features on the surface of a semiconductor device. The method may include passing a first electron beam having a first depth of focus over the semiconductor device and passing a second electron beam having a second depth of focus over the device. Electrical signals generated by the two electron beams may be analyzed singly or in combination to determine the lateral or vertical dimensions of the features at one or more positions relative to the surface of the semiconductor device. In one embodiment, the first and second electron beams are generated sequentially from a single electron gun. In another embodiment, the first and second electron beams are generated sequentially or simultaneously by either two separate electron guns or a single electron gun positioned proximate to two separate electron beam ports.
    Type: Grant
    Filed: July 31, 2000
    Date of Patent: November 1, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Douglas D. Do, Jeff C. Johnson
  • Patent number: 6124140
    Abstract: A method and apparatus for measuring the dimensions of features on the surface of a semiconductor device. The method may include passing a first electron beam having a first depth of focus over the semiconductor device and passing a second electron beam having a second depth of focus over the device. Electrical signals generated by the two electron beams may be analyzed singly or in combination to determine the lateral or vertical dimensions of the features at one or more positions relative to the surface of the semiconductor device. In one embodiment, the first and second electron beams are generated sequentially from a single electron gun. In another embodiment, the first and second electron beams are generated sequentially or simultaneously by either two separate electron guns or a single electron gun positioned proximate to two separate electron beam ports.
    Type: Grant
    Filed: May 22, 1998
    Date of Patent: September 26, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Douglas D. Do, Jeff C. Johnson