Abstract: Methods and apparatus for manipulating digital images. A warping module is described that enables the manipulation of a surface by selectively deforming portions of the surface while maintaining local rigidity. The user may position multiple control points on a surface to constrain deformation. The user may specify multiple properties (e.g., translation, rotation, depth, and scale) at each control point. A mesh may be overlaid on the surface. The warping module may perform an initialization in which the properties are propagated other vertices in the mesh to generate an initial deformed mesh. The warping module may then perform an iterative optimization operation on the deformed mesh to improve the deformation while retaining local rigidity. Thus, instead of moving every pixel in the surface, the warping module moves or adjusts coordinates of the vertices of the mesh. The surface is then deformed according to the deformed mesh.

Abstract: Image cropping suggestion using multiple saliency maps is described. In one or more implementations, component scores, indicative of visual characteristics established for visually-pleasing croppings, are computed for candidate image croppings using multiple different saliency maps. The visual characteristics on which a candidate image cropping is scored may be indicative of its composition quality, an extent to which it preserves content appearing in the scene, and a simplicity of its boundary. Based on the component scores, the croppings may be ranked with regard to each of the visual characteristics. The rankings may be used to cluster the candidate croppings into groups of similar croppings, such that croppings in a group are different by less than a threshold amount and croppings in different groups are different by at least the threshold amount. Based on the clustering, croppings may then be chosen, e.g., to present them to a user for selection.

Abstract: Methods and apparatus for manipulating digital images. A warping module is described that enables the manipulation of a surface by selectively deforming portions of the surface while maintaining local rigidity. The user may position multiple control points on a surface to constrain deformation. The user may specify multiple properties (e.g., translation, rotation, depth, and scale) at each control point. A mesh may be overlaid on the surface. The warping module may perform an initialization in which the properties are propagated other vertices in the mesh to generate an initial deformed mesh. The warping module may then perform an iterative optimization operation on the deformed mesh to improve the deformation while retaining local rigidity. Thus, instead of moving every pixel in the surface, the warping module moves or adjusts coordinates of the vertices of the mesh. The surface is then deformed according to the deformed mesh.

Abstract: Methods and systems can allow a user to avoid the inconvenience of selecting which of several computational photography techniques to apply when blending images. Instead, the user's workflow can be simplified in some cases and/or the image processing software can be less confusing to the user. For example, the user may import a set of images to image editing software. The software can automatically suggest a computational photography technique or techniques to apply to the set of images identified by the user. For example, the software may determine that the set of images comprise a stack or that the set of images comprise a panorama and suggest an appropriate technique for confirmation by the user. The software may apply the computational photography technique without the need for user intervention.

Abstract: A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1<RMTJ2, the bit cell has a “1” state.

Abstract: A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1<RMTJ2, the bit cell has a “1” state.

Abstract: A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1<RMTJ2, the bit cell has a “1” state.

Abstract: A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1<RMTJ2, the bit cell has a “1” state.

Abstract: A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1<RMTJ2, the bit cell has a “1” state.

Abstract: A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1<RMTJ2, the bit cell has a “1” state.

Abstract: A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1<RMTJ2, the bit cell has a “1” state.

Abstract: A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and a lower MTJ cell. The two conductive spacers in each bit cell are linked by a transistor which is controlled by a write word line. The two CPP cells in each bit cell have different resistance states and the MTJ cell and CPP cell in each sub-cell have different resistance states. The MTJ free layer rotates in response to switching in the CPP free layer because of a large demagnetization field exerted by the CPP free layer. An improved circuit design is disclosed that enables a faster and more reliable read process since the reference is a second MTJ within the same bit cell. When RMTJ1>RMTJ2, the bit cell has a “0” state, and when RMTJ1<RMTJ2, the bit cell has a “1” state.