Abstract: A facility for presenting an adaptive message is described. The facility receives a message in the computer system. Based upon the contents of the received message, the facility tests two or more digital content capabilities of the computer system. The facility then selects one of a number of different digital content elements based upon the results of the testing. The facility presents the selected digital content element.

Abstract: A facility for presenting an adaptive message is described. The facility receives a message in the computer system. Based upon the contents of the received message, the facility tests two or more digital content capabilities of the computer system. The facility then selects one of a number of different digital content elements based upon the results of the testing. The facility presents the selected digital content element.

Abstract: An alternating phase shift mask may be formed using a dry undercut etch. The dry undercut etch reduces problems associated with wet etching of quartz or glass masks. In addition, the use of the dry undercut etch enables image balancing between the zero and pi apertures. This approach is not limited by specific optical proximity corrected design patterns or chromium layer thickness.

Abstract: A mask having a pattern to modify a circuitry feature that has been exposed in a radiation sensitive layer by transmitting modifying radiation to a region of the radiation sensitive layer containing the exposed circuitry feature is described. The mask may reduce subwavelength distortions and proximity effect distortions of the exposed circuitry feature. The mask may be used to manufacture a semiconductor device having circuitry that is based on the modified circuitry feature.

Abstract: A mask having a pattern to modify a circuitry feature that has been exposed in a radiation sensitive layer by transmitting modifying radiation to a region of the radiation sensitive layer containing the exposed circuitry feature is described. The mask may reduce subwavelength distortions and proximity effect distortions of the exposed circuitry feature. The mask may be used to manufacture a semiconductor device having circuitry that is based on the modified circuitry feature.

Abstract: A mask having a pattern to modify a circuitry feature that has been exposed in a radiation sensitive layer by transmitting modifying radiation to a region of the radiation sensitive layer containing the exposed circuitry feature is described. The mask may reduce subwavelength distortions and proximity effect distortions of the exposed circuitry feature. The mask may be used to manufacture a semiconductor device having circuitry that is based on the modified circuitry feature.

Abstract: An apparatus comprising a mask having an active device area and a moat. The moat substantially surrounds the mask active device area and has a width greater than a plasma specie diffusional length. A method comprising depositing a layer of resist on a mask substrate having transparent and opaque layers; and exposing the resist layer to radiation. The radiation is patterned to produce features within an active device area. The radiation is also patterned to produce a moat substantially surrounding the active device area having a width greater than a plasma specie diffusional length.

Abstract: A facility for presenting an adaptive message is described. The facility receives a message in the computer system. Based upon the contents of the received message, the facility tests two or more digital content capabilities of the computer system. The facility then selects one of a number of different digital content elements based upon the results of the testing. The facility presents the selected digital content element.

Abstract: A mask having a pattern to modify a circuitry feature that has been exposed in a radiation sensitive layer by transmitting modifying radiation to a region of the radiation sensitive layer containing the exposed circuitry feature is described. The mask may reduce subwavelength distortions and proximity effect distortions of the exposed circuitry feature. The mask may be used to manufacture a semiconductor device having circuitry that is based on the modified circuitry feature.

Abstract: A method for forming small repeating structures, such as contact holes, is disclosed. The method comprises using a phase shift mask to perform a first exposure of a photoresist layer formed atop of a substrate. The phase shift mask includes etched regions and unetched regions. Next, the position of the phase shift mask is adjusted relative to the photoresist layer. A second exposure through the adjusted phase shift mask is performed on the photoresist layer. The photoresist is developed and is used as a mask for etching the substrate. After etch, the photoresist is stripped and cleaned. The resulted small sub-wavelength pattern is formed from the disclosed technique.

Abstract: An apparatus comprising a mask having an active device area and a moat. The moat substantially surrounds the mask active device area and has a width greater than a plasma specie diffusional length. A method comprising depositing a layer of resist on a mask substrate having transparent and opaque layers; and exposing the resist layer to radiation. The radiation is patterned to produce features within an active device area. The radiation is also patterned to produce a moat substantially surrounding the active device area having a width greater than a plasma specie diffusional length.

Abstract: An apparatus comprising a mask having an active device area and a moat. The moat substantially surrounds the mask active device area and has a width greater than a plasma specie diffusional length. A method comprising depositing a layer of resist on a mask substrate having transparent and opaque layers; and exposing the resist layer to radiation. The radiation is patterned to produce features within an active device area. The radiation is also patterned to produce a moat substantially surrounding the active device area having a width greater than a plasma specie diffusional length.

Abstract: An apparatus comprising a mask having an active device area and a moat. The moat substantially surrounds the mask active device area and has a width greater than a plasma specie diffusional length. A method comprising depositing a layer of resist on a mask substrate having transparent and opaque layers; and exposing the resist layer to radiation. The radiation is patterned to produce features within an active device area. The radiation is also patterned to produce a moat substantially surrounding the active device area having a width greater than a plasma specie diffusional length.