Abstract: The disclosure describes embodiments of systems, methods, and non-transitory computer readable storage media that dynamically surface multiple user-specific application function GUIs for setting up (or accessing) application functions for a user account. For instance, the disclosed systems can select and display a GUI for a first application function from a set of application functions. Moreover, upon receiving user interactions with the GUI for the first application function (and identifying whether or not the first application system is activated for the user account), the disclosed systems can select a second application function from the set of application functions and displays a GUI (e.g., a setup interface) for the second application function from the set of application functions.

Abstract: A headset device is described herein comprising a lower band comprising an outer surface and an inner surface, wherein a front portion of the lower band comprises at least one sensor positioned on the inner surface, wherein at least one arm extends from the lower band, wherein a proximal end of the at least one arm is rotatably attached to the lower band, wherein a distal end of the at least one arm comprises a sensor, wherein a rear portion of the lower band comprises adjustable straps for adjusting a circumference of the lower band. The headset device comprises an upper band comprising an upper surface and a lower surface, wherein at least one dry electrode component extends from the lower surface of the upper band, wherein the upper band is adjustably attached to the lower band.

Abstract: An assistive pouring device may aid a user in handling and pouring liquids from a container. An assistive pouring device may provide an open platform with at least one surface suitable for receiving the container. The platform may provide a base surface for supporting the weight of the container, and may optionally provide lateral surface that prevents or minimizes shifting of the container from side to side. One or more of the platform surfaces may be made from or coated with a material that is slip-resistant or tacky. One or more of the platform surfaces may provide a textured surface. One or more roller legs are connected to the platform, which allow the assistive pouring device to be easily rolled or tilted to pour liquids from a container.

Abstract: An assistive pouring device may aid a user in handling and pouring liquids from a container. An assistive pouring device may provide an open platform with at least one surface suitable for receiving the container. The platform may provide a base surface for supporting the weight of the container, and may optionally provide lateral surface that prevents or minimizes shifting of the container from side to side. One or more of the platform surfaces may be made from or coated with a material that is slip-resistant or tacky. One or more of the platform surfaces may provide a textured surface. One or more roller legs are connected to the platform, which allow the assistive pouring device to be easily rolled or tilted to pour liquids from a container.

Abstract: A method of reducing impurities in films to be deposited within a chemical vapor deposition (CVD) device includes steps of cleaning the process chamber of the CVD device, and depositing, prior to wafer processing, a gettering layer of, for example, phosphorous containing glass on interior surfaces of the process chamber. The gettering layer getters mobile alkali ions and substantially reduces or prevents outdiffusion of alkali ions and other impurities. The phosphorous containing glass may also be doped with boron. A blocking layer, such as undoped silicate glass, silicon nitride, silicon oxynitride or the like may be deposited on the gettering layer to trap impurities and to prevent phosphorous contamination in a applications sensitive to such contamination.

Abstract: A method of depositing an amorphous silicon based film that has controlled resistivity in between that of an intrinsic amorphous silicon and an n.sup.+ doped amorphous silicon on a substrate for an electronic device by a chemical vapor deposition process or a plasma-enhanced chemical vapor deposition process.

Abstract: A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.