Patents by Inventor Jeff Fournier

Jeff Fournier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Programmable resistance memory
    Patent number: 8908413
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: December 9, 2014
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Programmable Resistance Memory
    Publication number: 20110305075
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Application
    Filed: August 24, 2011
    Publication date: December 15, 2011
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Programmable resistance memory
    Patent number: 8009455
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Grant
    Filed: January 20, 2009
    Date of Patent: August 30, 2011
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Temperature and pressure control methods to fill features with programmable resistance and switching devices
    Patent number: 7994034
    Abstract: A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer, within the opening, and over selected portions of the bottom electrode, and a top electrode layer deposited over the active material layer. The device uses temperature and pressure control methods to increase surface mobility in an active material layer, thus providing complete coverage or fill of the openings in the insulative layer, selected exposed portions of the bottom electrode layer, and the insulative layer.
    Type: Grant
    Filed: March 10, 2008
    Date of Patent: August 9, 2011
    Assignee: Ovonyx, Inc.
    Inventors: Jeff Fournier, Wolodymyr Czubatyj, Tyler Lowrey
  • Programmable resistance memory and method of making same
    Publication number: 20100283029
    Abstract: A memory includes multiple layers of deposited memory material. An etch is performed on at least one layer of deposited memory material prior to the deposition of a subsequent layer of memory material.
    Type: Application
    Filed: May 11, 2009
    Publication date: November 11, 2010
    Inventors: Charles Dennison, Wolodymyr Czubatyj, Jeff Fournier, Tom Latowski, James Reed, Regino Sandoval
  • Programmable resistance memory
    Publication number: 20100182825
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Application
    Filed: January 20, 2009
    Publication date: July 22, 2010
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Method for manufacturing Chalcogenide devices
    Publication number: 20090298222
    Abstract: A method of chalcogenide device formation includes treatment of the surface upon which the chalcogenide material is deposited. The treatment reduces or eliminates native oxides and other contaminants from the surface, thereby increasing the adhesion of the chalcogenide layer to the treated surface, eliminating voids between the chalcogenide layer and deposition surface and reducing the degradation of chalcogenide material due to the migration of contaminants into the chalcogenide.
    Type: Application
    Filed: May 28, 2008
    Publication date: December 3, 2009
    Inventors: Tyler Lowrey, Jeff Fournier, Robert Nuss, Carl Schell, Guy Wicker, Jim Ricker, James Reed, Ed Spall, Sergey Kostylev, Wolodymyr Czubatyj, Regino Sandoval
  • Temperature and pressure control methods to fill features with programmable resistance and switching devices
    Publication number: 20090227092
    Abstract: A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer, within the opening, and over selected portions of the bottom electrode, and a top electrode layer deposited over the active material layer. The device uses temperature and pressure control methods to increase surface mobility in an active material layer, thus providing complete coverage or fill of the openings in the insulative layer, selected exposed portions of the bottom electrode layer, and the insulative layer.
    Type: Application
    Filed: March 10, 2008
    Publication date: September 10, 2009
    Inventors: Jeff Fournier, Wolodymyr Czubatyj, Tyler Lowrey