Abstract: An apparatus for determining the temperature of a substrate, in particular of a semiconductor wafer during a heating thereof by means of a first radiation source is described. Furthermore, an apparatus and a method for thermally treating substrates are described, in which the substrate is heated by means of at least one first radiation source. The apparatus comprises a first grating structure having grating lines, which are opaque with respect to a substantial portion of the radiation of the first radiation source, wherein the grating structure is arranged between the first radiation source and the substrate, and a drive unit for moving the first grating structure.

Abstract: An apparatus for determining the temperature of a substrate, in particular of a semiconductor wafer during a heating thereof by means of a first radiation source is described. Furthermore, an apparatus and a method for thermally treating substrates are described, in which the substrate is heated by means of at least one first radiation source. The apparatus comprises a first grating structure having grating lines, which are opaque with respect to a substantial portion of the radiation of the first radiation source, wherein the grating structure is arranged between the first radiation source and the substrate, and a drive unit for moving the first grating structure.

Abstract: An oxynitride film on the surface of a silicon or silicon germanium substrate is described where film is substantially an oxide film at the film oxide interface, and the nitrogen content of the film increases with the distance away from the substrate. The film is made by a process of rapidly processing a clean silicon wafer in an atmosphere of a nitrogen containing gas containing a very small percentage of oxygen containing gas.