Patents by Inventor Jeff Grunes

Jeff Grunes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220059467
    Abstract: Conducting alloys comprising cobalt, tungsten, and boron and conducting alloys comprising nickel, tungsten, and boron are described. These alloys can, for example, be used to form metal interconnects, can be used as liner layers for traditional copper or copper alloy interconnects, and can act as capping layers. The cobalt-tungsten and nickel-tungsten alloys can be deposited using electroless processes.
    Type: Application
    Filed: November 2, 2021
    Publication date: February 24, 2022
    Applicant: Intel Corporation
    Inventors: Yang CAO, Akm Shaestagir CHOWDHURY, Jeff GRUNES
  • Patent number: 11195798
    Abstract: Conducting alloys comprising cobalt, tungsten, and boron and conducting alloys comprising nickel, tungsten, and boron are described. These alloys can, for example, be used to form metal interconnects, can be used as liner layers for traditional copper or copper alloy interconnects, and can act as capping layers. The cobalt-tungsten and nickel-tungsten alloys can be deposited using electroless processes.
    Type: Grant
    Filed: July 25, 2014
    Date of Patent: December 7, 2021
    Assignee: Intel Corporation
    Inventors: Yang Cao, Akm Shaestagir Chowdhury, Jeff Grunes
  • Publication number: 20170018506
    Abstract: Conducting alloys comprising cobalt, tungsten, and boron and conducting alloys comprising nickel, tungsten, and boron are described. These alloys can, for example, be used to form metal interconnects, can be used as liner layers for traditional copper or copper alloy interconnects, and can act as capping layers. The cobalt-tungsten and nickel-tungsten alloys can be deposited using electroless processes.
    Type: Application
    Filed: July 25, 2014
    Publication date: January 19, 2017
    Applicant: Intel Corporation
    Inventors: Yang CAO, Akm Shaestagir CHOWDHURY, Jeff GRUNES
  • Patent number: 8486287
    Abstract: Fabrication methods disclosed herein provide for a nanoscale structure or a pattern comprising a plurality of nanostructures of specific predetermined position, shape and composition, including nanostructure arrays having large area at high throughput necessary for industrial production. The resultant nanostracture patterns are useful for nanostructure arrays, specifically sensor and catalytic arrays.
    Type: Grant
    Filed: October 14, 2004
    Date of Patent: July 16, 2013
    Assignee: The Regents of the University of California
    Inventors: Ji Zhu, Jeff Grunes, Yang-Kyu Choi, Jeffrey Bokor, Gabor Somorjai
  • Publication number: 20070215960
    Abstract: Fabrication methods disclosed herein provide for a nanoscale structure or a pattern comprising a plurality of nanostructures of specific predetermined position, shape and composition, including nanostructure arrays having large area at high throughput necessary for industrial production. The resultant nanostracture patterns are useful for nanostructure arrays, specifically sensor and catalytic arrays.
    Type: Application
    Filed: October 14, 2004
    Publication date: September 20, 2007
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Ji Zhu, Jeff Grunes, Yang-Kyu Choi, Jeffrey Bokor, Gabor Somorjai
  • Patent number: 7220296
    Abstract: An electroless plating bath for filling high aspect ratio features with copper metal comprises water, a water soluble copper containing compound having an initial concentration of 0.5 to 50 g/L, a catalyst reducing agent having an initial concentration of 0.02 to 1.5 g/L, a bulk reducing agent having an initial concentration of 2.37 to 29.7 g/L, a buffering agent having an initial concentration of 25 to 100 g/L, a grain refining additive having an initial concentration of 0.25 to 5.0 g/L, a bath stabilizing agent having an initial concentration of 0.02 to 0.1 g/L, and a rate controlling additive having an initial concentration of 0.01 to 0.5 g/L. The catalyst reducing agent may comprise glyoxylic acid and the bulk reducing agent may comprise glycolic acid or hypophosphite.
    Type: Grant
    Filed: December 15, 2005
    Date of Patent: May 22, 2007
    Assignee: Intel Corporation
    Inventors: Shaestagir Chowdhury, Matthew R. Bauer, Jeff Grunes, Soley Ozer