Abstract: A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the substrate. The field effect transistor further includes a source/drain (S/D) recess cavity below a top surface of the substrate. The S/D recess cavity is between the fin structure and the isolation structure. The field effect transistor further includes a strained structure in the S/D recess cavity. The strain structure includes a lower portion. The lower portion includes a first strained layer, wherein the first strained layer is in direct contact with the isolation structure, and a dielectric layer, wherein the dielectric layer is in direct contact with the substrate, and the first strained layer is in direct contact with the dielectric layer. The strained structure further includes an upper portion comprising a second strained layer overlying the first strained layer.

Abstract: One or more processors of a computing device may receive, from an external computing device, a first one or more application elements of a plurality of application elements of a first application that is to be installed at the computing device. The one or more processors may further obtain from a second application that is installed at the computing device, a second one or more application elements of the plurality of application elements of the first application that is to be installed at the computing device. The one or more processors may further install, using the first one or more application elements and the second one or more application elements, the first application at the computing device.

Abstract: One or more processors of a computing device may receive, from an external computing device, a first one or more application elements of a plurality of application elements of a first application that is to be installed at the computing device. The one or more processors may further obtain from a second application that is installed at the computing device, a second one or more application elements of the plurality of application elements of the first application that is to be installed at the computing device. The one or more processors may further install, using the first one or more application elements and the second one or more application elements, the first application at the computing device.

Abstract: One or more processors of a computing device may receive, from an external computing device, a first one or more application elements of a plurality of application elements of a first application that is to be installed at the computing device. The one or more processors may further obtain from a second application that is installed at the computing device, a second one or more application elements of the plurality of application elements of the first application that is to be installed at the computing device. The one or more processors may further install, using the first one or more application elements and the second one or more application elements, the first application at the computing device.

Abstract: One or more processors of a computing device may receive, from an external computing device, a first one or more application elements of a plurality of application elements of a first application that is to be installed at the computing device. The one or more processors may further obtain from a second application that is installed at the computing device, a second one or more application elements of the plurality of application elements of the first application that is to be installed at the computing device. The one or more processors may further install, using the first one or more application elements and the second one or more application elements, the first application at the computing device.