Abstract: In some embodiments, semiconductor fabrication process charging protection is provided by coupling a first diode protection device to a high voltage node and coupling a second diode protection device to the first diode protection device at a second node. Other embodiments are described and claimed.

Abstract: Embodiments of the invention enable detection of edge damages in semiconductor devices. To this purpose, one or more continuity structures may be provided, where each structure comprises an undulating arrangement disposed between active circuits of the semiconductor device and a perimeter of the metallization layers. The continuity structure(s) forms one or more conductive paths intersecting a plurality of metallization layers in the semiconductor device. A relative change in an electrical characteristic of the continuity structure(s) is monitored to ascertain whether or not an edge damage is present.

Abstract: A new cultivar of Thuja plicata named ‘Northern Spire’ that is characterized by its tightly branched growth habit, its uniform and narrow pyramidal plant habit that is ideal for hedging, its resistance to Keithia blight, its foliage that is dark green in spring and summer and turns russet red in fall and winter, and its deer resistance.