Patents by Inventor Jeff Hintzman

Jeff Hintzman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Creating high voltage FETs with low voltage process
    Patent number: 7704819
    Abstract: An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region I s formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity? drift portions of the HV-second-conductivity FET.
    Type: Grant
    Filed: January 7, 2009
    Date of Patent: April 27, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Chin Huang, Jeff Hintzman, James Weaver, Zhizhang Chen
  • Creating High Voltage FETs with Low Voltage Process
    Publication number: 20090130812
    Abstract: An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity? drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region I s formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity? drift portions of the HV-second-conductivity FET.
    Type: Application
    Filed: January 7, 2009
    Publication date: May 21, 2009
    Inventors: Chin Huang, Jeff Hintzman, James Weaver, Zhizhang Chen
  • Creating high voltage FETs with low voltage process
    Patent number: 7491595
    Abstract: An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region is formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity-drift portions of the HV-second-conductivity FET.
    Type: Grant
    Filed: July 6, 2005
    Date of Patent: February 17, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Chin Huang, Jeff Hintzman, James Weaver, Zhizhang Chen
  • Creating high voltage fets with low voltage process
    Publication number: 20070010052
    Abstract: An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region I s formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity-drift portions of the HV-second-conductivity FET.
    Type: Application
    Filed: July 6, 2005
    Publication date: January 11, 2007
    Inventors: Chin Huang, Jeff Hintzman, James Weaver, Zhizhang Chen