Patents by Inventor Jeff Honeycutt

Jeff Honeycutt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for semiconductor device isolation using oxygen and nitrogen ion implantations to reduce lateral encroachment
    Patent number: 6127242
    Abstract: The invention is a method to form a localized oxide isolation region by implantation of oxygen and nitrogen ions prior to a thermal oxide growth. In accordance with one embodiment of the invention, a silicon substrate is selectively masked with silicon nitride and oxygen ions are implanted into the unmasked regions of the substrate at an energy necessary to form a buried oxygen rich layer close to the substrate surface. The nitrogen ions are implanted at an angle such that they underlie the masked regions adjacent to the unmasked regions. The substrate is then oxidized to form silicon oxide using the silicon nitride as an oxidation mask.
    Type: Grant
    Filed: October 24, 1994
    Date of Patent: October 3, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Shubneesh Batra, Jeff Honeycutt