Abstract: A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the substrate. The field effect transistor further includes a source/drain (S/D) recess cavity below a top surface of the substrate. The S/D recess cavity is between the fin structure and the isolation structure. The field effect transistor further includes a strained structure in the S/D recess cavity. The strain structure includes a lower portion. The lower portion includes a first strained layer, wherein the first strained layer is in direct contact with the isolation structure, and a dielectric layer, wherein the dielectric layer is in direct contact with the substrate, and the first strained layer is in direct contact with the dielectric layer. The strained structure further includes an upper portion comprising a second strained layer overlying the first strained layer.

Abstract: Embodiments of radiographic imaging systems; radiography detectors and methods for using the same; and/or fabrication methods therefore can include radiographic imaging array that can include a plurality of pixels that each include a photoelectric conversion element coupled to a thin-film switching element. In certain exemplary embodiments, thin-film switching element is a metal oxide (e.g., a-IGZO) TFT manufactured using a reduce photolithography mask counts. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT that includes reduced lower alignment tolerances between TFT electrodes. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT including a reduced thickness active layer.

Abstract: Embodiments of methods/apparatus can transition a DR detector imaging array to low power photosensor mode where a first voltage is applied across the photosensors. Embodiments of methods/apparatus can provide an area radiographic imaging array including a plurality of pixels arranged in a matrix at the imaging array where each pixel can include at least one electrically chargeable photosensor and at least one transistor, row address circuits, signal sensing circuits, and photosensor power control circuitry to maintain a first voltage across photosensors of the portion of the imaging array when the detector is between imaging operations. In one embodiment, photosensor power control circuitry can maintain the first voltage across the photosensors when a power consumption of the signal sensing circuits is less than 1% of the power consumption of the signal sensing circuits during readout of a signal from the portion of the imaging array.

Abstract: Embodiments of radiographic imaging systems and/or methods can monitor the state of calibration of a digital x-ray detector, the detector including a solid state sensor with a plurality of pixels, an optional scintillating screen and at least one embedded microprocessor. In one embodiment, a method can use a computer or the embedded microprocessor or both, for setting a calibration operating mode of the portable detector; taking a plurality of dark images in the calibration mode; determining a dark difference image between pixel readings between two of the plurality of dark images; identifying pixels in the dark difference image that differ by over a threshold amount from at least some surrounding pixels in the dark difference image as defective pixels.

Abstract: Embodiments of radiographic imaging systems; radiography detectors and methods for using the same; and/or fabrication methods therefore can include radiographic imaging array that can include a plurality of pixels that each include a photoelectric conversion element coupled to a thin-film switching element. In certain exemplary embodiments, thin-film switching element is a metal oxide (e.g., a-IGZO) TFT manufactured using a reduce photolithography mask counts. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT that includes reduced lower alignment tolerances between TFT electrodes. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT including a reduced thickness active layer.

Abstract: Embodiments of methods/apparatus can transition a DR detector imaging array to low power photosensor mode where a first voltage is applied across the photosensors. Embodiments of methods/apparatus can provide an area radiographic imaging array including a plurality of pixels arranged in a matrix at the imaging array where each pixel can include at least one electrically chargeable photosensor and at least one transistor, row address circuits, signal sensing circuits, and photosensor power control circuitry to maintain a first voltage across photosensors of the portion of the imaging array when the detector is between imaging operations. In one embodiment, photosensor power control circuitry can maintain the first voltage across the photosensors when a power consumption of the signal sensing circuits is less than 1% of the power consumption of the signal sensing circuits during readout of a signal from the portion of the imaging array.

Abstract: Embodiments of radiographic imaging systems; radiography detectors and methods for using the same; and/or fabrication methods therefore can include radiographic imaging array that can include a plurality of pixels that each include a photoelectric conversion element coupled to a thin-film switching element. In certain exemplary embodiments, thin-film switching element is a metal oxide (e.g., a-IGZO) TFT manufactured using a reduce photolithography mask counts. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT that includes reduced lower alignment tolerances between TFT electrodes. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT including a reduced thickness active layer.

Abstract: Embodiments of methods/apparatus can transition a DR detector imaging array to low power photosensor mode where a first voltage is applied across the photosensors. Embodiments of methods/apparatus can provide an area radiographic imaging array including a plurality of pixels arranged in a matrix at the imaging array where each pixel can include at least one electrically chargeable photosensor and at least one transistor, row address circuits, signal sensing circuits, and photosensor power control circuitry to maintain a first voltage across photosensors of the portion of the imaging array when the detector is between imaging operations. In one embodiment, photosensor power control circuitry can maintain the first voltage across the photosensors when a power consumption of the signal sensing circuits is less than 1% of the power consumption of the signal sensing circuits during readout of a signal from the portion of the imaging array.

Abstract: Embodiments of methods and apparatus are disclosed for obtaining an imaging array or a digital radiographic system including a plurality of pixels where at least one pixel can include a scan line, a bias line, a switching element including a first terminal, a second terminal, and a control electrode where the control electrode is electrically coupled to the scan line; and a photoelectric conversion element including a first terminal electrically coupled to the bias line and a second terminal electrically coupled to the first terminal of the switching element, and a signal storage element formed in the same layers as the scan line, bias line, the data line, the switching element and the photoelectric conversion element. An area of one terminal of the signal storage element can be larger than a surface area of the pixel.

Abstract: Embodiments of radiographic imaging systems; digital radiography detectors and methods for using the same can include radiographic imaging pixel unit cells that can include a plurality of N pixel elements that each include a photoelectric thin-film conversion element connected in-series to a conversion thin-film switching element, a conductor connected to the plurality of N pixel elements and an output switching element connected between the conductor and an imaging array output. Scan lines or row lines can extend in a first direction coupled to more than one pixel unit cell and data lines or column lines can extend in a second direction coupled to more than one pixel unit cell.

Abstract: Embodiments of radiographic imaging systems; radiography detectors and methods for using the same; and/or fabrication methods therefore can include radiographic imaging array that can include a plurality of pixels that each include a photoelectric conversion element coupled to a thin-film switching element. In certain exemplary embodiments, thin-film switching element is a metal oxide (e.g., a-IGZO) TFT manufactured using a reduce photolithography mask counts. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT that includes reduced lower alignment tolerances between TFT electrodes. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT including a reduced thickness active layer.

Abstract: Embodiments of radiographic imaging systems; radiography detectors and methods for using the same can include radiographic imaging array that can include a plurality of pixels that each include a photoelectric thin-film conversion element coupled to a conversion thin-film switching element. In certain exemplary embodiments, a radiographic imaging array can include a bias control circuit to provide a bias voltage to the photosensors for a portion of the imaging array, an address control circuit to control scan lines, where each of the scan lines is coupled to a plurality of pixels in the portion of the imaging array; and a signal sensing circuit connected to data lines, where each of the data lines is coupled to at least two pixels in the portion of the imaging array, where power of the bias control circuit, the address control circuit, and the signal sensing circuit is not removed simultaneously.

Abstract: Embodiments of radiographic imaging systems and/or methods can monitor the state of calibration of a digital x-ray detector, the detector including a solid state sensor with a plurality of pixels, an optional scintillating screen and at least one embedded microprocessor. In one embodiment, a method can use a computer or the embedded microprocessor or both, for setting a calibration operating mode of the portable detector; taking a plurality of dark images in the calibration mode; determining a dark difference image between pixel readings between two of the plurality of dark images; identifying pixels in the dark difference image that differ by over a threshold amount from at least some surrounding pixels in the dark difference image as defective pixels.

Abstract: Embodiments of radiographic imaging systems; digital radiography detectors and methods for using the same can include radiographic imaging pixel unit cells that can include a plurality of N pixel elements that each include a photoelectric thin-film conversion element connected in-series to a conversion thin-film switching element, a conductor connected to the plurality of N pixel elements and an output switching element connected between the conductor and an imaging array output. Scan lines or row lines can extend in a first direction coupled to more than one pixel unit cell and data lines or column lines can extend in a second direction coupled to more than one pixel unit cell.

Abstract: Embodiments of methods/apparatus can transition a DR detector imaging array to low power photosensor mode where a first voltage is applied across the photosensors. Embodiments of methods/apparatus can provide an area radiographic imaging array including a plurality of pixels arranged in a matrix at the imaging array where each pixel can include at least one electrically chargeable photosensor and at least one transistor, row address circuits, signal sensing circuits, and photosensor power control circuitry to maintain a first voltage across photosensors of the portion of the imaging array when the detector is between imaging operations. In one embodiment, photosensor power control circuitry can maintain the first voltage across the photosensors when a power consumption of the signal sensing circuits is less than 1% of the power consumption of the signal sensing circuits during readout of a signal from the portion of the imaging array.

Abstract: Embodiments of methods and apparatus are disclosed for obtaining an imaging array or a digital radiographic system including a plurality of pixels where at least one pixel can include a scan line, a bias line, a switching element including a first terminal, a second terminal, and a control electrode where the control electrode is electrically coupled to the scan line; and a photoelectric conversion element including a first terminal electrically coupled to the bias line and a second terminal electrically coupled to the first terminal of the switching element, and a signal storage element formed in the same layers as the scan line, bias line, the data line, the switching element and the photoelectric conversion element. An area of one terminal of the signal storage element can be larger than a surface area of the pixel.

Abstract: A pixel comprising a scan line proximate to a first surface of a substrate and a bias line between the first surface of the substrate and a first terminal of a photosensing element, where a portion of the bias line is substantially parallel to the scan line. The pixel can also comprise a switching element proximate to the first surface of the substrate and aligned with at least a portion of the scan line. The pixel can include the photosensing element proximate to the first surface of the substrate and aligned with at least a portion of the bias line.