Patents by Inventor Jeff LaHaye

Jeff LaHaye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench cut light emitting diodes and methods of fabricating same
    Patent number: 7368756
    Abstract: A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.
    Type: Grant
    Filed: November 14, 2005
    Date of Patent: May 6, 2008
    Assignee: Cree, Inc.
    Inventors: Michael T. Bruhns, Brad Williams, Jeff LaHaye, Peter Andrews
  • Trench cut light emitting diodes and methods of fabricating same
    Publication number: 20060079082
    Abstract: A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.
    Type: Application
    Filed: November 14, 2005
    Publication date: April 13, 2006
    Inventors: Michael Bruhns, Brad Williams, Jeff LaHaye, Peter Andrews
  • Trench cut light emitting diodes and methods of fabricating same
    Patent number: 6995032
    Abstract: A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: February 7, 2006
    Assignee: Cree, Inc.
    Inventors: Michael T. Bruhns, Brad Williams, Jeff LaHaye, Peter Andrews
  • Trench cut light emitting diodes and methods of fabricating same
    Publication number: 20040051118
    Abstract: A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.
    Type: Application
    Filed: June 30, 2003
    Publication date: March 18, 2004
    Inventors: Michael T. Bruhns, Brad Williams, Jeff LaHaye, Peter Andrews