Patents by Inventor Jeff LEATHERSICH

Jeff LEATHERSICH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and structure for single crystal acoustic resonator devices using thermal recrystallization
    Patent number: 11245382
    Abstract: A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: February 8, 2022
    Assignee: AKOUSTIS, INC.
    Inventors: Shawn R. Gibb, Craig Moe, Jeff Leathersich, Steven Denbaars, Jeffrey B. Shealy
  • METHOD AND STRUCTURE FOR SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES USING THERMAL RECRYSTALLIZATION
    Publication number: 20200119715
    Abstract: A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.
    Type: Application
    Filed: December 10, 2019
    Publication date: April 16, 2020
    Inventors: Shawn R. GIBB, Craig MOE, Jeff LEATHERSICH, Steven DENBAARS, Jeffrey B. SHEALY
  • Method and structure for single crystal acoustic resonator devices using thermal recrystallization
    Patent number: 10523180
    Abstract: A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: December 31, 2019
    Assignee: Akoustis, Inc.
    Inventors: Shawn R. Gibb, Craig Moe, Jeff Leathersich, Steven Denbaars, Jeffrey B. Shealy
  • METHOD AND STRUCTURE FOR SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES USING THERMAL RECRYSTALLIZATION
    Publication number: 20180342999
    Abstract: A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.
    Type: Application
    Filed: July 13, 2018
    Publication date: November 29, 2018
    Inventors: Shawn R. GIBB, Craig MOE, Jeff LEATHERSICH, Steven DENBAARS, Jeffrey B. SHEALY