Patents by Inventor Jeff Lu

Jeff Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220289822
    Abstract: Provided herein are IL-21 prodrugs and methods of making and using thereof for stimulating the immune system, or treating cancer or an infectious disease.
    Type: Application
    Filed: August 21, 2020
    Publication date: September 15, 2022
    Applicant: ASKGENE PHARMA, INC.
    Inventors: Yuefeng LU, Chunxiao YU, Liqin LIU, Jian-Feng (Jeff) LU, Jui Chang (Ray) CHUANG
  • Publication number: 20060246421
    Abstract: The inventors have discovered that an ATPase-deficient dominant-negative mutant NS3 protein of hepatitis C virus inhibits activity of the wild-type NS3 protein and inhibits replication of hepatitis C virus (HCV). The solved crystal structure of a multi-enzyme NS3 complex on a DNA substrate is also provided. The inventors have tested a peptide matching the sequence of a portion of NS3 that interacts with another NS3 molecule for inhibiting HCV replication. The peptide inhibits HCV replication. Accordingly, the invention provides a method of inhibiting HCV replication in cells infected with HCV involving transforming the cells with a vector expressing a dominant-negative mutant NS3 gene. The invention also provides a method of inhibiting HCV replication in cells infected with HCV involving administering to the cells a dominant-negative mutant NS3 protein. The invention also provides peptides and agents that inhibit HCV replication and methods of identifying agents that inhibit HCV replication.
    Type: Application
    Filed: May 1, 2005
    Publication date: November 2, 2006
    Applicant: The Board of Trustees of the University of Arkansas
    Inventors: Kevin Raney, Craig Cameron, Bhuvanesh Dave, Joshua Sakon, Jeff Lu, Samuel MacKintosh, Thomas Jennings
  • Patent number: 6919259
    Abstract: A method for dry etching a feature to control an etching depth using endpoint detection and a sacrificial hardmask including providing a substrate for etching a feature opening into said substrate, said substrate provided with at least a first dielectric layer overlying the substrate; providing at least a second dielectric layer including a sacrificial hardmask at a predetermined thickness over the at least a first dielectric layer; photolithographically patterning and etching in a first dry etching process through a thickness of the at least a second dielectric layer and the at least a first dielectric layer to expose the substrate for dry etching the feature opening; and, dry etching in a second dry etching process the substrate and the sacrificial hardmask layer to endpoint detection of an underlying layer with respect to the sacrificial hardmask layer to thereby etch through a predetermined thickness of the substrate.
    Type: Grant
    Filed: October 21, 2002
    Date of Patent: July 19, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Yao-Chi Chang, Jeff Lu
  • Publication number: 20040077163
    Abstract: A method for dry etching a feature to control an etching depth using endpoint detection and a sacrificial hardmask including providing a substrate for etching a feature opening into said substrate, said substrate provided with at least a first dielectric layer overlying the substrate; providing at least a second dielectric layer including a sacrificial hardmask at a predetermined thickness over the at least a first dielectric layer; photolithographically patterning and etching in a first dry etching process through a thickness of the at least a second dielectric layer and the at least a first dielectric layer to expose the substrate for dry etching the feature opening; and, dry etching in a second dry etching process the substrate and the sacrificial hardmask layer to endpoint detection of an underlying layer with respect to the sacrificial hardmask layer to thereby etch through a predetermined thickness of the substrate.
    Type: Application
    Filed: October 21, 2002
    Publication date: April 22, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yao-Chi Chang, Jeff Lu
  • Patent number: D824637
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: August 7, 2018
    Inventors: Willy Chen, Jeff Lu, Benson Tu