Abstract: The invention relates to specific constructs of Tie2/VEGF bispecific antibodies. The invention also relates to pharmaceutical compositions of the bispecific antibodies and methods of using the same for treating a disease in a subject. Also provided are isolated nucleic acids encoding the isolated bispecific antibodies, vectors comprising the isolated nucleic acids, and host cells comprising the vectors.

Abstract: The inventors have discovered that an ATPase-deficient dominant-negative mutant NS3 protein of hepatitis C virus inhibits activity of the wild-type NS3 protein and inhibits replication of hepatitis C virus (HCV). The solved crystal structure of a multi-enzyme NS3 complex on a DNA substrate is also provided. The inventors have tested a peptide matching the sequence of a portion of NS3 that interacts with another NS3 molecule for inhibiting HCV replication. The peptide inhibits HCV replication. Accordingly, the invention provides a method of inhibiting HCV replication in cells infected with HCV involving transforming the cells with a vector expressing a dominant-negative mutant NS3 gene. The invention also provides a method of inhibiting HCV replication in cells infected with HCV involving administering to the cells a dominant-negative mutant NS3 protein. The invention also provides peptides and agents that inhibit HCV replication and methods of identifying agents that inhibit HCV replication.

Abstract: A method for dry etching a feature to control an etching depth using endpoint detection and a sacrificial hardmask including providing a substrate for etching a feature opening into said substrate, said substrate provided with at least a first dielectric layer overlying the substrate; providing at least a second dielectric layer including a sacrificial hardmask at a predetermined thickness over the at least a first dielectric layer; photolithographically patterning and etching in a first dry etching process through a thickness of the at least a second dielectric layer and the at least a first dielectric layer to expose the substrate for dry etching the feature opening; and, dry etching in a second dry etching process the substrate and the sacrificial hardmask layer to endpoint detection of an underlying layer with respect to the sacrificial hardmask layer to thereby etch through a predetermined thickness of the substrate.

Abstract: A method for dry etching a feature to control an etching depth using endpoint detection and a sacrificial hardmask including providing a substrate for etching a feature opening into said substrate, said substrate provided with at least a first dielectric layer overlying the substrate; providing at least a second dielectric layer including a sacrificial hardmask at a predetermined thickness over the at least a first dielectric layer; photolithographically patterning and etching in a first dry etching process through a thickness of the at least a second dielectric layer and the at least a first dielectric layer to expose the substrate for dry etching the feature opening; and, dry etching in a second dry etching process the substrate and the sacrificial hardmask layer to endpoint detection of an underlying layer with respect to the sacrificial hardmask layer to thereby etch through a predetermined thickness of the substrate.