Abstract: A radio frequency (RF) mixing device wherein RF core circuit elements requiring signal splitting are provided with one or more signal splitting element(s) (“balun(s)”) integrated on-chip with the core RF circuit elements. The RF mixing device comprises one or more RF circuit element(s) integrated on a common substrate with one or more balun(s), wherein the common substrate is an insulating substrate further provided with associated silicon-based CMOS circuitry formed in a thin, highly crystalline silicon layer formed on the insulating substrate. The insulating substrate is selected from transparent crystalline materials such as sapphire, spinel, etc. The common substrate is preferably ultrathin silicon-on-sapphire.

Abstract: A radio frequency (RF) mixing device wherein RF core circuit elements requiring signal splitting are provided with one or more signal splitting element(s) (“balun(s)”) integrated on-chip with the core RF circuit elements. The RF mixing device comprises one or more RF circuit element(s) integrated on a common substrate with one or more balun(s), wherein the common substrate is an insulating substrate further provided with associated silicon-based CMOS circuitry formed in a thin, highly crystalline silicon layer formed on the insulating substrate. The insulating substrate is selected from transparent crystalline materials such as sapphire, spinel, etc. The common substrate is preferably ultrathin silicon-on-sapphire.