Patents by Inventor Jeff Van Wagoner

Jeff Van Wagoner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Medical device and method of manufacturing
    Patent number: 7477943
    Abstract: Methods and apparatus are provided for manufacturing a medical device. An implantable medical device includes a semiconductor substrate, an epitaxial layer, and a power transistor. The epitaxial layer overlies the semiconductor substrate. The power transistor is formed in the epitaxial layer and includes a first electrode, a control electrode, and a second electrode. The power transistor has a voltage breakdown greater than 100 volts. The current flow of the power transistor is vertical through the epitaxial layer to the semiconductor substrate. A backside contact couples to the first electrode of the power transistor. A method of manufacturing a medical device includes a power transistor formed in an epitaxial layer overlying a semiconductor substrate. A deep trench is etched through the epitaxial layer exposing the semiconductor substrate. A first electrode contact region couples to an exposed area of the semiconductor substrate in the deep trench.
    Type: Grant
    Filed: November 26, 2003
    Date of Patent: January 13, 2009
    Assignee: Medtronic, Inc.
    Inventors: Ralph B. Danzl, Mark R. Boone, Paul F. Gerrish, Michael F. Mattes, Tyler Mueller, Jeff Van Wagoner
  • Medical device and method of manufacturing
    Publication number: 20050113895
    Abstract: Methods and apparatus are provided for manufacturing a medical device. An implantable medical device includes a semiconductor substrate, an epitaxial layer, and a power transistor. The epitaxial layer overlies the semiconductor substrate. The power transistor is formed in the epitaxial layer and includes a first electrode, a control electrode, and a second electrode. The power transistor has a voltage breakdown greater than 100 volts. The current flow of the power transistor is vertical through the epitaxial layer to the semiconductor substrate. A backside contact couples to the first electrode of the power transistor. A method of manufacturing a medical device includes a power transistor formed in an epitaxial layer overlying a semiconductor substrate. A deep trench is etched through the epitaxial layer exposing the semiconductor substrate. A first electrode contact region couples to an exposed area of the semiconductor substrate in the deep trench.
    Type: Application
    Filed: November 26, 2003
    Publication date: May 26, 2005
    Inventors: Ralph Danzl, Mark Boone, Paul Gerrish, Michael Mattes, Tyler Mueller, Jeff Van Wagoner