Abstract: A method of planarizing a spin-on material layer is provided. A substrate having a plurality of openings thereon is provided. A spin-on material layer is formed on the substrate such that the openings are completely filled. A plasma etching process is carried out to remove a portion of the spin-on material layer and expose the substrate surface. During the plasma etching process, the substrate is cooled to maintain an etching selectivity between the spin-on material layer on the substrate surface and the spin-on material layer within the openings so that a planar spin-on material layer is ultimately obtained.

Abstract: A method of planarizing a spin-on material layer is provided. A substrate having a plurality of openings thereon is provided. A spin-on material layer is formed on the substrate such that the openings are completely filled. A plasma etching process is carried out to remove a portion of the spin-on material layer and expose the substrate surface. During the plasma etching process, the substrate is cooled to maintain an etching selectivity between the spin-on material layer on the substrate surface and the spin-on material layer within the openings so that a planar spin-on material layer is ultimately obtained.

Abstract: A method for manufacturing a semiconductor device that includes providing a substrate, providing a dielectric layer over the substrate, depositing a layer of anti-reflective coating over the dielectric layer, providing a layer of photoresist over the layer of anti-reflective coating, patterning and defining the photoresist layer to provide a plurality of photoresist structures, wherein at least two adjacent photoresist structures provide a first distance, anisotropically etching the layer of anti-reflective coating unmasked by the photoresist structures to remove only a portion of the anti-reflective coating layer, etching the anti-reflective coating to completely remove the layer of anti-reflective coating unmasked by the photoresist structures, and etching the dielectric layer to form at least one trench between the at least two adjacent photoresist structures, wherein the first distance is substantially equal to a second distance defining an opening at the top of the trench.

Abstract: A method for manufacturing a semiconductor device that includes providing a substrate, providing a dielectric layer over the substrate, depositing a layer of anti-reflective coating over the dielectric layer, providing a layer of photoresist over the layer of anti-reflective coating, patterning and defining the photoresist layer to provide a plurality of photoresist structures, wherein at least two adjacent photoresist structures provide a first distance, anisotropically etching the layer of anti-reflective coating unmasked by the photoresist structures to remove only a portion of the anti-reflective coating layer, etching the anti-reflective coating to completely remove the layer of anti-reflective coating unmasked by the photoresist structures, and etching the dielectric layer to form at least one trench between the at least two adjacent photoresist structures, wherein the first distance is substantially equal to a second distance defining an opening at the top of the trench.