Abstract: Group III nitride light emitting diode (LED) structures with improved electrical performance are disclosed. A Group III nitride LED structure includes one or more n-type layers, one or more p-type layers, and an active region that includes a plurality of sequentially arranged barrier-well units. In certain embodiments, doping profiles of barrier layers of the barrier-well units are configured such that a doping concentration in some barrier-well units is different than a doping concentration in other barrier-well units. In certain embodiments, a doping profile of a particular barrier layer is non-uniform. In addition to active region configurations, the doping profiles and sequence of the n-type layers and p-type layers are configured to provide Group III nitride structures with higher efficiency, lower forward voltages, and improved forward voltage performance at elevated currents and temperatures.

Abstract: Group III nitride light emitting diode (LED) structures with improved electrical performance are disclosed. A Group III nitride LED structure includes one or more n-type layers, one or more p-type layers, and an active region that includes a plurality of sequentially arranged barrier-well units. In certain embodiments, doping profiles of barrier layers of the barrier-well units are configured such that a doping concentration in some barrier-well units is different than a doping concentration in other barrier-well units. In certain embodiments, a doping profile of a particular barrier layer is non-uniform. In addition to active region configurations, the doping profiles and sequence of the n-type layers and p-type layers are configured to provide Group III nitride structures with higher efficiency, lower forward voltages, and improved forward voltage performance at elevated currents and temperatures.