Abstract: An optical depth sensing system is provided including an active illumination source; and a colloidal quantum dot photodetector. The colloidal quantum dot photodetector having colloidal quantum dots as a light sensing elements and the system has rise times that are less than 5.0 ns and fall times less than 10.0 ns.

Abstract: Colloidal quantum dot devices are provided including an integrated circuit; a colloidal quantum dot structure on the integrated circuit; and an encapsulation layer on the colloidal quantum dot structure, the encapsulation layer having a thickness from about 0.5 nm to about 500 nm.

Abstract: An integrated device is provided including a substrate; a CQD photodetector on the substrate; and an integrated optical grating contact on the substrate. The integrated optical grating contact is a conductive grating contact and is provided between the substrate and the photodetector. The integrated device further includes a top contact on the photodetector.

Abstract: A colloidal quantum dot (CQD) photodetector is provided including an optical blocking shield and a CQD photodetector element on the optical blocking shield. The optical blocking shield is integrated with the CQD photodetector element to provide an integrated structure and the integrated structure is provided on a wafer. The CQD photodetector detects light with sensitivity from about 250 nm to about 5000 nm. The CQD photodetector may be included as part of high resolution applications as well as global shutters for these applications.