Abstract: Disclosed is a non-volatile storage element that is defined between a bitline and a complementary bitline, and that can be accessed by a selected wordline is disclosed. The non-volatile storage element includes a high voltage latch that is configured to receive a pump voltage, and a reference voltage that is about half of the pump voltage. The non-volatile storage element also includes a storage cell that is configured to receive a logical programming value from the bitline and the complementary bit line when the wordline is driven high to turn on a first passgate and a second passgate. The storage cell further includes a capacitive transistor having its back gate, source and drain connected to a first terminal of the first passgate, and a tunneling transistor having its back gate, source and drain connected to a second terminal of the second passgate. The capacitive transistor and the tunneling transistor are configured to share a floating gate.