Abstract: A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.

Abstract: A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.

Abstract: A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.

Abstract: Semiconductor structures including an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, wherein the etch stop material comprises an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the stack; and a second conductive material between the channel material and at least one of the first conductive materials in the stack of alternating insulating materials and first conductive materials, wherein the second conductive material is not between the channel material and the etch stop material. Also disclosed are methods of fabricating such semiconductor structures.

Abstract: Semiconductor structures including an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, wherein the etch stop material comprises an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the stack; and a second conductive material between the channel material and at least one of the first conductive materials in the stack of alternating insulating materials and first conductive materials, wherein the second conductive material is not between the channel material and the etch stop material. Also disclosed are methods of fabricating such semiconductor structures.

Abstract: Semiconductor structures including an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, wherein the etch stop material comprises an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the stack; and a second conductive material between the channel material and at least one of the first conductive materials in the stack of alternating insulating materials and first conductive materials, wherein the second conductive material is not between the channel material and the etch stop material. Also disclosed are methods of fabricating such semiconductor structures.

Abstract: Semiconductor structure including an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, wherein the etch stop material comprises an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the stack; and a second conductive material between the channel material and at least one of the first conductive materials in the stack of alternating insulating materials and first conductive materials, wherein the second conductive material is not between the channel material and the etch stop material. Also disclosed are methods of fabricating such semiconductor structures.

Abstract: Several embodiments of systems for depositing materials and associated methods of operation are disclosed herein. In one embodiment, the system includes a reaction chamber having an inlet and an outlet, a gas source coupled to the inlet of the reaction chamber, and a neutralizer source coupled to the outlet of the reaction chamber. The gas source contains a first precursor gas, a second precursor gas, and a purge gas. The neutralizer source contains a neutralizing agent configured to reduce a rate of reaction between the first precursor gas and the second precursor gas.