Patents by Inventor Jeffery Brown

Jeffery Brown has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050151075
    Abstract: A mass filter is disclosed comprising an orthogonal acceleration electrode 9. Ions entering the mass filter are orthogonally accelerated by the orthogonal acceleration electrode 9 in a primary acceleration region 2 and enter a flight region 3. The ions 6,7,8 are then reflected by a reflectron 4 and are directed towards an exit region of the mass filter. Ions having a desired mass to charge ratio are arranged to arrive in the primary acceleration region 2 at a time when a voltage pulse applied to the orthogonal acceleration electrode 9 falls from a maximum to zero. Ions having a desired mass to charge ratio are orthogonally decelerated such that they have a zero component of velocity in the orthogonal direction. Accordingly, ions having a desired mass to charge ratio exit the mass filter in an axial direction.
    Type: Application
    Filed: November 16, 2004
    Publication date: July 14, 2005
    Applicant: Micromass UK Limited
    Inventors: Jeffery Brown, Daniel Kenny
  • Publication number: 20050098721
    Abstract: A mass spectrometer is disclosed comprising an ion source 4, a field free or drift region 5 and an ion mirror 7 comprising a reflectron. Metastable parent ions which spontaneously fragment by Post Source Decay whilst passing through the field free or drift region 5 are arranged to enter the ion mirror 7 and be reflected by the reflectron towards an ion detector 8 when the reflectron is maintained at a certain voltage. The process is then repeated with the reflectron being maintained at a slightly lower voltage. Two related sets of time of flight or mass spectral data are obtained for the two different voltage settings of the reflectron. From the two data sets the different times of flight for the same species of fragment ion can be determined. The mass to charge ratio of the parent ion which fragmented to produce the particular species of fragment ion can then be determined from the times of flight of the fragment ions.
    Type: Application
    Filed: October 14, 2004
    Publication date: May 12, 2005
    Applicant: Micromass UK Limited
    Inventors: Robert Bateman, Jeffery Brown, Daniel Kenny
  • Publication number: 20050027941
    Abstract: Apparatus, system and methods are provided for performing speculative data prefetching in a chip multiprocessor (CMP). Data is prefetched by a helper thread that runs on one core of the CMP while a main program runs concurrently on another core of the CMP. Data prefetched by the helper thread is provided to the helper core. For one embodiment, the data prefetched by the helper thread is pushed to the main core. It may or may not be provided to the helper core as well. A push of prefetched data to the main core may occur during a broadcast of the data to all cores of an affinity group. For at least one other embodiment, the data prefetched by a helper thread is provided, upon request from the main core, to the main core from the helper core's local cache.
    Type: Application
    Filed: July 31, 2003
    Publication date: February 3, 2005
    Inventors: Hong Wang, Perry Wang, Jeffery Brown, Per Hammarlund, George Chrysos, Doron Orenstein, Steve Liao, John Shen
  • Publication number: 20030032225
    Abstract: A method and structure for forming a notched gate structure having a gate conductor layer on a gate dielectric layer. The gate conductor layer has a first thickness. The inventive method includes patterning a mask over the gate conductor layer, etching the gate conductor layer in regions not protected by the mask to a reduced thickness, (the reduced thickness being less than the first thickness), depositing a passivating film over the gate conductor layer, etching the passivating film to remove the passivating film from horizontal portions of the gate conductor layer (using an anisotropic etch), selectively etching the gate conductor layer to remove the gate conductor layer from all regions not protected by the mask or the passivating film. This forms undercut notches within the gate conductor layer at corner locations where the gate conductor meets the gate dielectric layer. The passivating film comprises a C-containing film, a Si-containing film, a Si—C-containing film or combinations thereof.
    Type: Application
    Filed: August 10, 2001
    Publication date: February 13, 2003
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jeffery Brown, Richard Wise, Hongwen Yan, Qingyun Yang, Chienfan Yu
  • Publication number: 20020144657
    Abstract: A process chamber for conducting an atomic layer deposition (ALD) process employs an electrostatic chuck (ESC) to retain the substrate. RF power is coupled to electrodes in the process chamber to generate ions and reactive atoms for depositing layers on the substrate.
    Type: Application
    Filed: October 3, 2001
    Publication date: October 10, 2002
    Inventors: Tony P. Chiang, Karl F. Leeser, Jeffery A. Brown, Jason E. Babcoke