Abstract: A semiconductor device package comprises a container including a base and sidewalls. The base is configured to support a semiconductor device chip, and a lead frame extends through at least one of the sidewalls. A portion of the lead frame within the sidewall has at least one aperture penetrating into the lead frame. The sidewall material extends into the aperture, thereby forming a strong interfacial bond that provides a low leakage, sidewall-lead-frame interface. The base has a reentrant feature that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby forming a low leakage base-sidewall interface. The top surface of the base has a groove that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby enhancing the low leakage base-sidewall interface.

Abstract: The specification describes a plastic cavity package for semiconductor devices that provides additional mechanical integrity for leads that extend from the plastic housing. Portions of the leads that are within the plastic housing are provided with cutouts. When the plastic housing is formed, or when the cavity is filled with polymer, plastic material fills the cutout, and joins to the mass of plastic on either side of the cutout, thus forming a continuous integral mass of plastic. The end result is that the plastic in the cutout, coupled to the main plastic mass, and to the rigid package sidewall, forms an effective anchor against pulling and bending forces the leads may encounter in manufacture or use.

Abstract: A semiconductor device package comprises a container having a base and side walls of an electrically insulating material. A semiconductor device chip is disposed on the base, and a lead frame extends through the side walls. At least one electrical conductor couples the lead frame to the chip. A first layer of an electrically insulating cured gel covers the chip and the lead frame, and a second layer of an electrically insulating cured gel covers at least the portion of the first layer that covers the chip, but does not extend to the side walls. In one embodiment, the second layer has the shape of a dome. In a preferred embodiment the gel comprises silicone. In another embodiment a third layer of conformal insulating material is disposed on the second layer and essentially fills the container. Also is described is a method of making the package for use with RFLDMOS chips.

Abstract: A semiconductor device package comprises a container including a base and sidewalls. The base is configured to support a semiconductor device chip, and a lead frame extends through at least one of the sidewalls. A portion of the lead frame within the sidewall has at least one aperture penetrating into the lead frame. The sidewall material extends into the aperture, thereby forming a strong interfacial bond that provides a low leakage, sidewall-lead-frame interface. The base has a reentrant feature that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby forming a low leakage-base-sidewall interface. The top surface of the base has a groove that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby enhancing the low leakage base-sidewall interface.

Abstract: An integrated circuit device having a flexible leadframe, and techniques for fabricating the flexible leadframe and integrated circuit device, are provided. In one aspect of the invention, an integrated circuit device comprises a heat spreader having a top surface and a bottom surface. At least one integrated circuit die is attached to the top surface of the heat spreader. A flexible leadframe is also attached to the top surface of the heat spreader. The flexible leadframe has one or more flexible layers, including at least one flexible insulating layer. A plurality of electrically conductive traces are defined on the at least one flexible insulating layer.

Abstract: An encapsulating compound includes an organic polymeric carrier material and a dielectric filler material added to the polymeric carrier material. The dielectric filler material has a dielectric constant associated therewith which is less than a dielectric constant of the polymeric carrier material. The dielectric filler material is interspersed with the polymeric carrier material such that a dielectric constant of the encapsulating compound is less than the dielectric constant of the polymeric carrier material alone.

Abstract: An integrated circuit device having a flexible leadframe, and techniques for fabricating the flexible leadframe and integrated circuit device, are provided. In one aspect of the invention, an integrated circuit device comprises a heat spreader having a top surface and a bottom surface. At least one integrated circuit die is attached to the top surface of the heat spreader. A flexible leadframe is also attached to the top surface of the heat spreader. The flexible leadframe has one or more flexible layers, including at least one flexible insulating layer. A plurality of electrically conductive traces are defined on the at least one flexible insulating layer.

Abstract: The present invention includes tab supports on the solder ball side of a BGA package substrate. The tab supports are preferably sized in a height direction to avoid or prevent a warped corner or edge of a BGA substrate from excessively pressing down on the solder balls when warping occurs, most often during the high temperature solder-reflow process. Exemplary tab supports comprise small standoff tabs placed in all four corners of the lower substrate of a BGA package, and/or on all four edges of the lower substrate. The invention has particular application to a plastic BGA (PBGA) package.