Abstract: Methods of operating an apparatus allow a memory to generate a test mode signal to trigger a test, in response to the memory detecting a predetermined command from a system bus.

Abstract: Embodiments of the present invention relate to configurable inputs and/or outputs for memory and memory stacking applications. More specifically, embodiments of the present invention include memory devices that include a die having a circuit configured for enablement by a particular signal, an input pin configured to receive the particular signal, and a path selector configured to selectively designate a signal path to the circuit from the input pin.

Abstract: Memory modules having accurate operating parameters stored thereon and methods for fabricating and implementing such devices to improve system performance. Memory modules comprising a number of volatile memory devices may be fabricated. Operating parameters for specific memory devices on the memory module or a specific lot in which the memory devices are fabricated may be stored on a non-volatile memory device on the memory module. A system may be configured in accordance with the operating parameters stored on the non-volatile memory device such that corresponding thresholds are not exceeded.

Abstract: A system and method for decoding command signals that includes a command decoder configured to generate internal control signals to perform an operation based on the command signals and an operating state. The same combination of command signals can request different commands depending on the operating state. A command is selected from a first set of operations according to the command signals when the memory system is in a first operating state and a command is selected from a second set of operations according to the command signals when the memory system is in a second operating state.

Abstract: Memory modules and methods for fabricating and implementing memory modules wherein unique operating current values corresponding to specific memory devices on the memory modules are accessed from a database such that the operating current values may be implemented to improve system performance. Memory modules comprising a number of volatile memory devices may be fabricated. Operating current values corresponding to the specific memory devices on the memory module may be stored in a database and accessed during fabrication or during implementation of the memory modules in a system. System performance may be optimized by implementing the unique operating current values corresponding to the specific memory devices on the memory modules.

Abstract: A dynamic random access memory device includes a mode register that is programmed with a delay value. In some embodiments, a offset code is also stored in the memory device. The memory device uses the delay value, which may be added to or multiplied by the offset code, to delay the initiation of a received auto-refresh or self-refresh command. A large number of dynamic random access memory devices in a system may be provided with different delay values and possibly offset codes so that the memory device do not all perform refreshes simultaneously in response to an auto-refresh or self-refresh command issued to all of the memory devices simultaneously. As a result, the peak current drawn by the memory devices resulting from the auto-refresh command or self-refresh command is maintained at a relatively low value.

Abstract: A method of operating a memory device includes placing the memory device in a persistent auto precharge mode of operation, applying a disable command to the memory device, and disabling the persistent auto precharge mode of operation in response to the applied disable command. Memory devices operating according this method may be used in memory systems that infrequently experience page hits, such as server systems, while the ability to disable the persistent auto precharge mode allows such memory devices to be used in systems that frequently experience page hits, such as graphics or input/output applications.

Abstract: An apparatus and method couples memory devices in a memory module to a memory hub on the module such that signals traveling from the hub to the devices have approximately the same propagation time regardless of which device is involved. Specifically, the devices are arranged around the hub in pairs, with each pair of devices being oriented such that a functional group of signals for each device in the pair, such as the data bus signals, are positioned adjacent each other on a circuit board of the module. This allows for a data and control-address busses having approximately the same electrical characteristics to be routed between the hub and each of the devices. This physical arrangement of devices allows high speed operation of the module. In one example, the hub is located in the center of the module and eight devices, four pairs, are positioned around the hub.

Abstract: A combination of circuits for use in a memory device is comprised of a decode circuit responsive to a first portion of address information for identifying a word to be read or written. The decode circuit is further responsive to a second portion of the address information for identifying an order in which one or more portions of the identified word are to be read or written. An address sequencer routes at least one bit of the address information. A sequencer circuit is responsive to the address sequencer for ordering the plurality of data bits within each portion of the identified word.

Abstract: Methods of manufacturing memory devices and memory modules comprising memory device. Specifically, respective operating current values may be measured and/or stored on a plurality of memory devices. More specifically, the operating current values may be stored in programmable elements, such as antifuses, on memory devices. The memory devices may be coupled to a substrate to form a memory module. A non-volatile memory device may be coupled to the substrate. The operating current values may be read from the programmable elements and stored in the non-volatile memory device. Once the memory module is incorporated into a system, the programmable elements or non-volatile memory may be accessed such that the system can be configured to optimally operate in accordance with the operating current values measured for each memory device in the system.

Abstract: Methods of configuring a system. More specifically, operating current values corresponding to respective memory devices of memory module may be stored in programmable elements, such as antifuses, located on the memory device, during fabrication. The operating current values may be read from and/or stored in a non-volatile memory device on the memory module. Once the memory module is incorporated into a system, the programmable elements on the memory devices and/or the non-volatile memory device on the memory module may be accessed such that the system can be configured to optimally operate in accordance with the operating current values measured for each memory device in the system.

Abstract: A technique for storing accurate operating current values using programmable elements on memory devices. More specifically, programmable elements, such as antifuses, located on a memory device are programmed with measured operating current values corresponding to the memory device, during fabrication. The memory device may be incorporated into a memory module that is incorporated into a system. Once the memory module is incorporated into a system, the programmable elements may be accessed such that the system can be configured to optimally operate in accordance with the operating current values measured for each memory device in the system.

Abstract: A method and apparatus are provided for active termination control in a memory by an module register providing an active termination control signal to the memory. The module register monitors a system command bus for read and write commands. In response to detecting a read or write command, the module register generates an active termination control signal to the memory. The memory turns on active termination based on information programmed into one or more mode registers of the memory. The memory maintains the active termination in an on state for a predetermined time based on information programmed into one or more mode registers of the memory.

Abstract: Memory modules and methods for fabricating and implementing memory modules wherein unique operating current values corresponding to specific memory devices on the memory modules are accessed from a database such that the operating current values may be implemented to improve system performance. Memory modules comprising a number of volatile memory devices may be fabricated. Operating current values corresponding to the specific memory devices on the memory module may be stored in a database and accessed during fabrication or during implementation of the memory modules in a system. System performance may be optimized by implementing the unique operating current values corresponding to the specific memory devices on the memory modules.

Abstract: A dynamic random access memory device includes a mode register that is programmed with a delay value. In some embodiments, a offset code is also stored in the memory device. The memory device uses the delay value, which may be added to or multiplied by the offset code, to delay the initiation of a received auto-refresh or self-refresh command. A large number of dynamic random access memory devices in a system may be provided with different delay values and possibly offset codes so that the memory device do not all perform refreshes simultaneously in response to an auto-refresh or self-refresh command issued to all of the memory devices simultaneously. As a result, the peak current drawn by the memory devices resulting from the auto-refresh command or self-refresh command is maintained at a relatively low value.

Abstract: Apparatus and methods of forming and operating the apparatus provide a means for a memory to generate a test mode signal to trigger a test in response to the memory detecting a predetermined command from a system bus. In an embodiment, a mode register in the memory includes an indicator to enable or disable issuance of a test mode signal form the memory. The mode register may contain information identifying the predetermined command.

Abstract: A method and apparatus are provided for active termination control in a memory by an module register providing an active termination control signal to the memory. The module register monitors a system command bus for read and write commands. In response to detecting a read or write command, the module register generates an active termination control signal to the memory. The memory turns on active termination based on information programmed into one or more mode registers of the memory. The memory maintains the active termination in an on state for a predetermined time based on information programmed into one or more mode registers of the memory.

Abstract: A method and apparatus are provided for active termination control in a memory by an module register providing an active termination control signal to the memory. The module register monitors a system command bus for read and write commands. In response to detecting a read or write command, the module register generates an active termination control signal to the memory. The memory turns on active termination based on information programmed into one or more mode registers of the memory. The memory maintains the active termination in an on state for a predetermined time based on information programmed into one or more mode registers of the memory.

Abstract: A method and apparatus are provided for active termination control in a memory by an module register providing an active termination control signal to the memory. The module register monitors a system command bus for read and write commands. In response to detecting a read or write command, the module register generates an active termination control signal to the memory. The memory turns on active termination based on information programmed into one or more mode registers of the memory. The memory maintains the active termination in an on state for a predetermined time based on information programmed into one or more mode registers of the memory.

Abstract: Methods and apparatus for operating a memory in a half density or a full density mode, and switching between the modes when required. A memory device defaults to half density operation upon startup for lower power consumption, and seitches to full density operation when the lower addresses are full. When the upper addresses are once again empty, the devices switches back to half density operation.