Patents by Inventor Jeffery L. Libbert

Jeffery L. Libbert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High resistivity silicon-on-insulator structure and method of manufacture thereof
    Patent number: 11145538
    Abstract: A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: October 12, 2021
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Jeffery L. Libbert, Qingmin Liu, Gang Wang, Andrew M. Jones
  • HIGH RESISTIVITY SILICON-ON-INSULATOR STRUCTURE AND METHOD OF MANUFACTURE THEREOF
    Publication number: 20200027778
    Abstract: A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.
    Type: Application
    Filed: September 25, 2019
    Publication date: January 23, 2020
    Inventors: Jeffery L. Libbert, Qingmin Liu, Gang Wang, Andrew M. Jones
  • High resistivity silicon-on-insulator structure and method of manufacture thereof
    Patent number: 10468295
    Abstract: A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: November 5, 2019
    Assignee: GLOBALWAFERS CO. LTD.
    Inventors: Jeffery L. Libbert, Qingmin Liu, Gang Wang, Andrew M. Jones
  • HIGH RESISTIVITY SILICON-ON-INSULATOR STRUCTURE AND METHOD OF MANUFACTURE THEREOF
    Publication number: 20180158721
    Abstract: A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.
    Type: Application
    Filed: December 1, 2017
    Publication date: June 7, 2018
    Inventors: Jeffery L. Libbert, Qingmin Liu, Gang Wang, Andrew M. Jones