Abstract: A structure and a method of forming the structure. The structure including: an integrated circuit chip having a set of wiring levels from a first wiring level to a last wiring level, each wiring level including one or more damascene, dual-damascene wires or damascene vias embedded in corresponding interlevel dielectric levels, a top surface of a last damascene or dual-damascene wire of the last wiring level substantially coplanar with a top surface of a corresponding last interlevel dielectric level; a capping layer in direct physical and electrical contact with a top surface of the last damascene or dual-damascene wire, the last damascene or dual-damascene wire comprising copper; a dielectric passivation layer formed on a top surface of the last interlevel dielectric level; and an aluminum pad in direct physical and electrical contact with the capping layer, a top surface of the aluminum pad not covered by the dielectric passivation layer.

Abstract: A method for stopping chemical processing of a semiconductor wafer in an emergency included the steps of: 1) placing a chemical having a water concentration of about 92% or less in a tank; 2) processing a semiconductor wafer with the chemical in the process tank; 3) detecting a malfunction in the processing; 4) quick draining the chemical from the process tank; and 5) rinsing the wafer in the process tank with a rinsing material to stop chemical action. Optionally, the method may include recycling the drained chemical from a storage tank to the process tank for use in a subsequent process step.

Abstract: A recirculation mechanism is used to force slurry toward the center of a platen used for chemical-mechanical polishing. The recirulator captures the slurry that would otherwise be flung from a rotating platen because of centrifugal force. The captured slurry is forced upwardly away from the surface of the platen and toward the center of the platen to recycle the slurry.

Abstract: A method for removing one or more particles from a surface of an object is provided. The method has first and second steps of detecting and locating the one or more particles on the surface of the object. In a third step, focused energy is directed onto one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface. In preferred variations of the method of the present invention, the object is a semiconductor wafer and the directed focused energy is in the form of a laser. Also provided is an apparatus for removing the plurality of particles from the surface of the object. The apparatus includes a detector for detecting and locating the plurality of particles on the surface of the object, and a laser for directing focused energy on one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface.

Abstract: A method for removing one or more particles from a surface of an object is provided. The method has first and second steps of detecting and locating the one or more particles on the surface of the object. In a third step, focused energy is directed onto one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface. In preferred variations of the method of the present invention, the object is a semiconductor wafer and the directed focused energy is in the form of a laser. Also provided is an apparatus for removing the plurality of particles from the surface of the object. The apparatus includes a detector for detecting and locating the plurality of particles on the surface of the object, and a laser for directing focused energy on one or more of the detected particles to break a bond energy between the one or more particles and the surface thereby removing the one or more particles from the surface.