Abstract: The present invention provides methods of treating skin disorders includes delivering to a mammal a composition containing a compound of formula I, or tautomers thereof, in a regimen, wherein formula I is: and wherein R1-R5 and Q1 are defined as described herein. Specifically, methods for treating acne, hirsutism, and conditioning the skin are described. Also provided are novel PR modulators of formula II.

Abstract: The present invention provides methods of inducing contraception which includes delivering to a female a composition containing a compound of formula I or formula II, or tautomers thereof, in a regimen which involves delivering one or more of a selective estrogen receptor modulator, wherein formula I is: and wherein R1–R5 and Q1 are defined as described herein. Methods of providing hormone replacement therapy and for treating carcinomas, dysfunctional bleeding, uterine leiomyomata, endometriosis, and polycystic ovary syndrome is provided which includes delivering a compound of formula I and a selective estrogen receptor modulator are also described.

Abstract: A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.

Abstract: In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.

Abstract: A wireless communication device (10) includes a radio frequency transceiver (22) adapted for burst transmission responsive to an enable signal in accordance with at least one communication protocol and an infrared transceiver (24) adapted for asynchronous data communication. The infrared transceiver (24) is responsive to the enable signal to suspend data communication. A controller (20) is coupled to each of the radio frequency transceiver (22) and the infrared transceiver (24), and the controller (20) is operable to generate the enable signal in accordance with the at least one communication protocol.

Abstract: A low-k dielectric metal conductor interconnect structure having no micro-trenches present therein and a method of forming such a structure are provided. Specifically, the above structure is achieved by providing an interconnect structure which includes at least a multilayer of dielectric materials which are applied sequentially in a single spin apply tool and then cured in a single step and a plurality of patterned metal conductors within the multilayer of spun-on dielectrics. The control over the conductor resistance is obtained using a buried etch stop layer having a second atomic composition located between the line and via dielectric layers of porous low-k dielectrics having a first atomic composition. The inventive interconnect structure also includes a hard mask which assists in forming the interconnect structure of the dual damascene-type.

Abstract: A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus forming a dielectric material that has a low dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.

Abstract: A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.

Abstract: A method for forming a multilayer interconnect structure on a substrate that include interconnected conductive wiring and vias spaced apart by a combination of solid or gaseous dielectrics.

Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.

Abstract: Embodiments of the present invention are directed to an uninterruptible power supply for providing AC power to a load. In embodiments of the present invention, the uninterruptible power supply includes an input to receive AC power from an AC power source, an output that provides AC power, a DC voltage source that provides DC power, the DC voltage source having an energy storage device, an inverter operatively coupled to the DC voltage source to receive DC power and to provide AC power.

Abstract: A spin-on cap useful as a post-CMP cap for Cu interconnect structures is provided. The inventive spin-on cap includes a low-k dielectric (on the order of 3.5 or less) and at least one additive. The at least one additive employed in the present invention is capable of binding Cu ions, and is soluble in the spun-on low-k dielectric. The spin-on cap of the present invention may further include a spun-on low-k (on the order of 3.5 or less) reactive-ion etch (RIE) stop layer. Spin-on caps containing a bilayer of low-dielectric plus at least additive and low-k RIE stop layer are preferred. It is noted that the inventive spin-on cap of the present invention does not significantly increase the effective dielectric constant of the interconnect structure and does not add additional cost to the fabrication of the interconnect structure since a single deposition tool, i.e., spin coating tool, is employed. Moreover, because of the presence of the additive in the spin-on cap, Cu migration is substantially minimized.

Abstract: A low-k dielectric metal conductor interconnect structure having no micro-trenches present therein and a method of forming such a structure are provided. Specifically, the above structure is achieved by providing an interconnect structure which includes at least a multilayer of dielectric materials which are applied sequentially in a single spin apply tool and then cured in a single step and a plurality of patterned metal conductors within the multilayer of spun-on dielectrics. The control over the conductor resistance is obtained using a buried etch stop layer having a second atomic composition located between the line and via dielectric layers of porous low-k dielectrics having a first atomic composition. The inventive interconnect structure also includes a hard mask which assists in forming the interconnect structure of the dual damascene-type.

Abstract: An interconnect structure including a patterned multilayer of spun-on dielectrics as well as methods for manufacturing the same are provided. The interconnect structure includes a patterned multilayer of spun-on dielectrics formed on a surface of a substrate. The patterned multilayer of spun-on dielectrics is composed of a bottom low-k dielectric, a buried etch stop layer, and a top low-k dielectric, wherein the bottom and top low-k dielectrics have a first composition, the said buried etch stop layer has a second composition which is different from the first composition and the buried etch stop layer is covalently bonded to said top and bottom low-k dielectrics. The interconnect structure further includes a polish stop layer formed on the patterned multilayer of spun-on dielectrics; and metal conductive regions formed within the patterned multilayer of spun-on dielectrics.

Abstract: The present invention provides methods of treating skin disorders includes delivering to a mammal a composition containing a compound of formula I, or tautomers thereof, in a regimen, wherein formula I is: 1

Abstract: A metal wiring plus low-k dielectric interconnect structure of the dual damascene-type is provided wherein the conductive metal lines and vias are built into a hybrid low-k dielectric which includes two spun-on dielectrics that have different atomic compositions and at least one of the two spun-on dielectrics is porous. The two spun-on dielectrics used in forming the inventive hybrid low-k dielectric each have a dielectric constant of about 2.6 or less, preferably each dielectric of the hybrid structure has a k of from about 1.2 to about 2.2. By utilizing the inventive hybrid low-k dielectric excellent control over metal line resistance (trench depth) is obtained, without no added cost. This is achieved without the use of a buried etch stop layer, which if present, would be formed between the two spun-on dielectrics.

Abstract: The present invention provides methods of inducing contraception which includes delivering to a female a composition containing a compound of formula I or formula II, or tautomers thereof, in a regimen which involves delivering one or more of a selective estrogen receptor modulator, wherein formula I is: 1

Abstract: Embodiments of the present invention are directed to an uninterruptible power supply for providing AC power to a load having a capacitive element.

Abstract: A low-k dielectric metal conductor interconnect structure having no micro-trenches present therein and a method of forming such a structure are provided. Specifically, the above structure is achieved by providing an interconnect structure which includes at least a multilayer of dielectric materials which are applied sequentially in a single spin apply tool and then cured in a single step and a plurality of patterned metal conductors within the multilayer of spun-on dielectrics. The control over the conductor resistance is obtained using a buried etch stop layer having a second atomic composition located between the line and via dielectric layers of porous low-k dielectrics having a first atomic composition. The inventive interconnect structure also includes a hard mask which assists in forming the interconnect structure of the dual damascene-type.

Abstract: A low-k dielectric metal conductor interconnect structure having no micro-trenches present therein and a method of forming such a structure are provided. Specifically, the above structure is achieved by providing an interconnect structure which includes at least a multilayer of dielectric materials which are applied sequentially in a single spin apply tool and then cured in a single step and a plurality of patterned metal conductors within the multilayer of spun-on dielectrics. The control over the conductor resistance is obtained using a buried etch stop layer having a second atomic composition located between the line and via dielectric layers of porous low-k dielectrics having a first atomic composition. The inventive interconnect structure also includes a hard mask which assists in forming the interconnect structure of the dual damascene-type.