Patents by Inventor Jeffrey A Dykstra
Jeffrey A Dykstra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136983Abstract: A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.Type: ApplicationFiled: October 24, 2023Publication date: April 25, 2024Inventors: Dan William Nobbe, David Halchin, Jeffrey A. Dykstra, Michael P. Gaynor, David Kovac, Kelly Michael Mekechuk, Gary Frederick Kaatz, Chris Olson
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Publication number: 20240106420Abstract: Methods and devices for reading and programming a state of a switch device are presented. The programming of the state of the switch device is performed by providing driving pulses to the switch device. The amplitude and the width of the driving pulses are a function of one or more of a) temperature of the switch device, b) desired state of the switch device, and c) operational time of the switch device. The described devices include a device to store the data demonstrating the functional relation between the amplitude and the width of the driving pulses and the temperature of the switch device. Such device can be a lookup table or an arithmetic logic unit (ALU). The disclosed switch devices can be PCM switches.Type: ApplicationFiled: July 11, 2023Publication date: March 28, 2024Inventors: Jeffrey A. DYKSTRA, Rodd E. NOVAK
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Publication number: 20240106430Abstract: Methods and devices for reading and programming a state of a switch device are presented. Reading of the state is provided by measuring a resistance of the switch via injection of a current. If a measured resistance does not correspond to a resistance of an expected state, then the switch is reprogrammed, and the state reread. The switch device may form part of a complex switch circuit that includes a combination of shunt and through switch devices. Currents injected into external loads coupled to the switch circuit increase accuracy in reading of the state. Further accuracy in reading of the state of a through switch device is provided by provision of a bypass path to a shunt switch device. The complex switch circuit may be implemented as a SPDT switch including two branches, each branch including a shunt and a through switch device. Several types of switch devices, such as phase-change material (PCM) devices may be implemented.Type: ApplicationFiled: September 23, 2022Publication date: March 28, 2024Inventors: Jeffrey A. DYKSTRA, Jaroslaw ADAMSKI, Smita KANIKARAJ, Douglas LACY
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Patent number: 11942929Abstract: Methods and devices to control PCM switches are disclosed. The described devices include PCM switch drivers and logic and control circuits, all integrated with the PCM and the associated heater on the same chip. Various architectures for the driver are also presented, including architectures implement feedback mechanism to mitigate variations from process, temperature, and supply voltage.Type: GrantFiled: July 26, 2022Date of Patent: March 26, 2024Assignee: PSEMI CORPORATIONInventors: Jeffrey A. Dykstra, Jaroslaw Adamski, Edward Nicholas Comfoltey
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Patent number: 11936374Abstract: Methods and devices for reading and programming a state of a switch device are presented. Reading of the state is provided by measuring a resistance of the switch via injection of a current. If a measured resistance does not correspond to a resistance of an expected state, then the switch is reprogrammed, and the state reread. The switch device may form part of a complex switch circuit that includes a combination of shunt and through switch devices. Currents injected into external loads coupled to the switch circuit increase accuracy in reading of the state. Further accuracy in reading of the state of a through switch device is provided by provision of a bypass path to a shunt switch device. The complex switch circuit may be implemented as a SPDT switch including two branches, each branch including a shunt and a through switch device. Several types of switch devices, such as phase-change material (PCM) devices may be implemented.Type: GrantFiled: September 23, 2022Date of Patent: March 19, 2024Assignee: PSEMI CORPORATIONInventors: Jeffrey A. Dykstra, Jaroslaw Adamski, Smita Kanikaraj, Douglas Lacy
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Publication number: 20240039527Abstract: Methods and devices to control PCM switches are disclosed. The described devices include PCM switch drivers and logic and control circuits, all integrated with the PCM and the associated heater on the same chip. Various architectures for the driver are also presented, including architectures implement feedback mechanism to mitigate variations from process, temperature, and supply voltage.Type: ApplicationFiled: July 26, 2022Publication date: February 1, 2024Inventors: Jeffrey A. DYKSTRA, Jaroslaw ADAMSKI, Edward Nicholas COMFOLTEY
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Patent number: 11870398Abstract: Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.Type: GrantFiled: September 15, 2021Date of Patent: January 9, 2024Assignee: pSemi CorporationInventors: Tero Tapio Ranta, Christopher C. Murphy, Jeffrey A. Dykstra
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Patent number: 11811367Abstract: A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.Type: GrantFiled: April 27, 2022Date of Patent: November 7, 2023Assignee: pSemi CorporationInventors: Dan William Nobbe, David Halchin, Jeffrey A. Dykstra, Michael P. Gaynor, David Kovac, Kelly Michael Mekechuk, Gary Frederick Kaatz, Chris Olson
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Publication number: 20230288462Abstract: Circuits and methods that enable stacking of phase change material (PCM) switches and that accommodate variations in the resistance of the resistive heater(s) of such switches. Stacking is enabled by providing isolation switches for the resistive heater(s) in a PCM switch to reduce parasitic capacitance caused by the proximity of the resistive heater(s) to the PCM region of a PCM switch. Variations in the resistance of the resistive heater(s) of a PCM switch are mitigated or eliminated by sensing the actual resistance of the resistive heater(s) and then determining a suitable adjusted electrical pulse profile for the resistive heater(s) that generates a precise thermal pulse to the PCM region, thereby reliably achieving a desired switch state while extending the life of the resistive heater(s) and the phase-change material.Type: ApplicationFiled: March 21, 2023Publication date: September 14, 2023Inventors: Jaroslaw Adamski, Jeffrey A. Dykstra, Edward Nicholas Comfoltey
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Patent number: 11624762Abstract: Circuits and methods that enable stacking of phase change material (PCM) switches and that accommodate variations in the resistance of the resistive heater(s) of such switches. Stacking is enabled by providing isolation switches for the resistive heater(s) in a PCM switch to reduce parasitic capacitance caused by the proximity of the resistive heater(s) to the PCM region of a PCM switch. Variations in the resistance of the resistive heater(s) of a PCM switch are mitigated or eliminated by sensing the actual resistance of the resistive heater(s) and then determining a suitable adjusted electrical pulse profile for the resistive heater(s) that generates a precise thermal pulse to the PCM region, thereby reliably achieving a desired switch state while extending the life of the resistive heater(s) and the phase-change material.Type: GrantFiled: June 18, 2021Date of Patent: April 11, 2023Assignee: pSemi CorporationInventors: Jaroslaw Adamski, Jeffrey A. Dykstra, Edward Nicholas Comfoltey
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Publication number: 20220404406Abstract: Circuits and methods that enable stacking of phase change material (PCM) switches and that accommodate variations in the resistance of the resistive heater(s) of such switches. Stacking is enabled by providing isolation switches for the resistive heater(s) in a PCM switch to reduce parasitic capacitance caused by the proximity of the resistive heater(s) to the PCM region of a PCM switch. Variations in the resistance of the resistive heater(s) of a PCM switch are mitigated or eliminated by sensing the actual resistance of the resistive heater(s) and then determining a suitable adjusted electrical pulse profile for the resistive heater(s) that generates a precise thermal pulse to the PCM region, thereby reliably achieving a desired switch state while extending the life of the resistive heater(s) and the phase-change material.Type: ApplicationFiled: June 18, 2021Publication date: December 22, 2022Inventors: Jaroslaw Adamski, Jeffrey A. Dykstra, Edward Nicholas Comfoltey
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Publication number: 20220406997Abstract: Circuits and methods that enable stacking of phase change material (PCM) switches and that accommodate variations in the resistance of the resistive heater(s) of such switches. Stacking is enabled by providing isolation switches for the resistive heater(s) in a PCM switch to reduce parasitic capacitance caused by the proximity of the resistive heater(s) to the PCM region of a PCM switch. Variations in the resistance of the resistive heater(s) of a PCM switch are mitigated or eliminated by sensing the actual resistance of the resistive heater(s) and then determining a suitable adjusted electrical pulse profile for the resistive heater(s) that generates a precise thermal pulse to the PCM region, thereby reliably achieving a desired switch state while extending the life of the resistive heater(s) and the phase-change material.Type: ApplicationFiled: May 13, 2022Publication date: December 22, 2022Inventors: Jaroslaw Adamski, Jeffrey A. Dykstra, Edward Nicholas Comfoltey
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Publication number: 20220329215Abstract: A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.Type: ApplicationFiled: April 27, 2022Publication date: October 13, 2022Inventors: Dan William Nobbe, David Halchin, Jeffrey A. Dykstra, Michael P. Gaynor, David Kovac, Kelly Michael Mekechuk, Gary Frederick Kaatz, Chris Olson
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Publication number: 20220182016Abstract: Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.Type: ApplicationFiled: September 15, 2021Publication date: June 9, 2022Inventors: Tero Tapio Ranta, Christopher C. Murphy, Jeffrey A. Dykstra
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Patent number: 11323078Abstract: A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.Type: GrantFiled: August 6, 2020Date of Patent: May 3, 2022Assignee: pSemi CorporationInventors: Dan William Nobbe, David Halchin, Jeffrey A. Dykstra, Michael P. Gaynor, David Kovac, Kelly Michael Mekechuk, Gary Frederick Kaatz, Chris Olson
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Patent number: 11128261Abstract: Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.Type: GrantFiled: January 31, 2019Date of Patent: September 21, 2021Assignee: pSemi CorporationInventors: Tero Tapio Ranta, Christopher C. Murphy, Jeffrey A. Dykstra
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Publication number: 20210058041Abstract: A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.Type: ApplicationFiled: August 6, 2020Publication date: February 25, 2021Inventors: Dan William Nobbe, David Halchin, Jeffrey A. Dykstra, Michael P. Gaynor, David Kovac, Kelly Michael Mekechuk, Gary Frederick Kaatz, Chris Olson
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Patent number: 10756684Abstract: A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.Type: GrantFiled: May 9, 2019Date of Patent: August 25, 2020Assignee: pSemi CorporationInventors: Dan William Nobbe, David Halchin, Jeffrey A. Dykstra, Michael P. Gaynor, David Kovac, Kelly Michael Mekechuk, Gary Frederick Kaatz, Chris Olson
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Publication number: 20200007088Abstract: Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.Type: ApplicationFiled: January 31, 2019Publication date: January 2, 2020Inventors: Tero Tapio Ranta, Christopher C. Murphy, Jeffrey A. Dykstra
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Publication number: 20190267954Abstract: A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.Type: ApplicationFiled: May 9, 2019Publication date: August 29, 2019Inventors: Dan William Nobbe, David Halchin, Jeffrey A. Dykstra, Michael P. Gaynor, David Kovac, Kelly Michael Mekechuk, Gary Frederick Kaatz, Chris Olson