Patents by Inventor Jeffrey A. Mittereder

Jeffrey A. Mittereder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SILICON NITRIDE PASSIVATION WITH AMMONIA PLASMA PRETREAMENT FOR IMPROVING RELIABILITY OF AlGaN/GaN HEMTs
    Publication number: 20080105880
    Abstract: This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN barrier and a GaN buffer, with the channel disposed, when present, at the interface of the barrier and the buffer. Surface treated with ammonia plasma resembles untreated surface. The method pertains to treatment of the device with ammonia plasma prior to passivation to extend reliability of the device beyond a period of time on the order of 300 hours of operation, the device typically being a 2 DEG AlGaN/GaN high electron mobility transistor with essentially no gate lag and with essentially no rf power output degradation.
    Type: Application
    Filed: December 21, 2007
    Publication date: May 8, 2008
    Inventors: Andrew Edwards, Steven Binari, Jeffrey Mittereder
  • Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs
    Patent number: 7338826
    Abstract: This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN barrier and a GaN buffer, with the channel disposed, when present, at the interface of the barrier and the buffer. Surface treated with ammonia plasma resembles untreated surface. The method pertains to treatment of the device with ammonia plasma prior to passivation to extend reliability of the device beyond a period of time on the order of 300 hours of operation, the device typically being a 2 DEG AlGaN/GaN high electron mobility transistor with essentially no gate lag and with essentially no rf power output degradation.
    Type: Grant
    Filed: December 9, 2005
    Date of Patent: March 4, 2008
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Jeffrey A. Mittereder, Andrew P. Edwards, Steven C. Binari
  • Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AIGaN/GaN HEMTs
    Publication number: 20070131970
    Abstract: This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN barrier and a GaN buffer, with the channel disposed, when present, at the interface of the barrier and the buffer. Surface treated with ammonia plasma resembles untreated surface. The method pertains to treatment of the device with ammonia plasma prior to passivation to extend reliability of the device beyond a period of time on the order of 300 hours of operation, the device typically being a 2 DEG AlGaN/GaN high electron mobility transistor with essentially no gate lag and with essentially no rf power output degradation.
    Type: Application
    Filed: December 9, 2005
    Publication date: June 14, 2007
    Inventors: Jeffrey Mittereder, Andrew Edwards, Steven Binari