Abstract: A vertical gallium nitride (GaN) PN diode uses epitaxial growth of a thick drift region with a very low carrier concentration and a carefully designed multi-zone junction termination extension to achieve high voltage blocking and high-power efficiency. An exemplary large area (1 mm2) diode had a forward pulsed current of 3.5 A, an 8.3 m?-cm2 specific on-resistance, and a 5.3 kV reverse breakdown. A smaller area diode (0.063 mm2) was capable of 6.4 kV breakdown with a specific on-resistance of 10.2 m?-cm2, when accounting for current spreading through the drift region at a 45° angle.

Abstract: A multijunction solar cell assembly and its method of manufacture including first and second discrete and different semiconductor body subassemblies which are electrically interconnected to form a five junction solar cell, each semiconductor body subassembly including first, second, third and fourth lattice matched subcells; wherein the average band gap of all four cells in each subassembly is greater than 1.44 eV.

Abstract: A multijunction solar cell assembly and its method of manufacture including first and second discrete and different semiconductor body subassemblies which are electrically interconnected to form a five junction solar cell, each semiconductor body subassembly including first, second, third and fourth lattice matched subcells; wherein the average band gap of all four cells in each subassembly is greater than 1.44 eV.

Abstract: A method of manufacturing a solar cell assembly by providing a substrate; depositing on the substrate a sequence of layers of semiconductor material forming a solar cell; mounting a permanent laminate supporting member with a thickness of 50 microns or less on top of the sequence of layers; utilizing the laminate structure for supporting the epitaxial sequence of layers of semiconductor material forming a solar cell during the processes of removing the substrate and depositing and lithographically patterning a plurality of metal grid lines disposed on the top surface of the first solar subcell, and attaching a cover glass over at least the grid lines of the solar cell.

Abstract: A PZT (lead zirconate titanate) element including one or more outside surfaces including a layer of encapsulation and metallization material and the method of making the same including at least the steps of providing a wafer of ceramic material including a base and one or more walls defining one or more recesses in the wafer which are filled with an encapsulation material. The encapsulation material is then cured and a layer of metallization is applied to one or more of the outside surfaces of the wafer and encapsulation material. Cuts are then made through the layer of metallization and cured encapsulation material to divide the wafer into a plurality of individual and separate ceramic elements with one or more surfaces including a layer of metallization and encapsulation.

Abstract: A PZT (lead zirconate titanate) element including one or more outside surfaces including a layer of encapsulation and metallization material and the method of making the same including at least the steps of providing a wafer of ceramic material including a base and one or more walls defining one or more recesses in the wafer which are filled with an encapsulation material. The encapsulation material is then cured and a layer of metallization is applied to one or more of the outside surfaces of the wafer and encapsulation material. Cuts are then made through the layer of metallization and cured encapsulation material to divide the wafer into a plurality of individual and separate ceramic elements with one or more surfaces including a layer of metallization and encapsulation.

Abstract: A PZT (lead zirconate titanate) element including one or more outside surfaces including a layer of encapsulation and metallization material and the method of making the same including at least the steps of providing a wafer of ceramic material including a base and one or more walls defining one or more recesses in the wafer which are filled with an encapsulation material. The encapsulation material is then cured and a layer of metallization is applied to one or more of the outside surfaces of the wafer and encapsulation material. Cuts are then made through the layer of metallization and cured encapsulation material to divide the wafer into a plurality of individual and separate ceramic elements with one or more surfaces including a layer of metallization and encapsulation.

Abstract: A PZT (lead zirconate titanate) element including one or more outside surfaces including a layer of encapsulation and metallization material and the method of making the same including at least the steps of providing a wafer of ceramic material including a base and one or more walls defining one or more recesses in the wafer which are filled with an encapsulation material. The encapsulation material is then cured and a layer of metallization is applied to one or more of the outside surfaces of the wafer and encapsulation material. Cuts are then made through the layer of metallization and cured encapsulation material to divide the wafer into a plurality of individual and separate ceramic elements with one or more surfaces including a layer of metallization and encapsulation.

Abstract: A PZT (lead zirconate titanate) element including one or more outside surfaces including a layer of encapsulation and metallization material and the method of making the same including at least the steps of providing a wafer of ceramic material including a base and one or more walls defining one or more recesses in the wafer which are filled with an encapsulation material. The encapsulation material is then cured and a layer of metallization is applied to one or more of the outside surfaces of the wafer and encapsulation material. Cuts are then made through the layer of metallization and cured encapsulation material to divide the wafer into a plurality of individual and separate ceramic elements with one or more surfaces including a layer of metallization and encapsulation.