Abstract: A gas delivery apparatus having a heating block assembly, a heating element, a gas line, and a temperature-sensing switch. The heating block assembly includes a pair of heating blocks. Individual ones of the pair of heating blocks comprise a planar surface. The planar surface comprises first and second grooves that are substantially parallel. The first and second grooves extend along a length of the heating block. The planar surfaces of the individual ones of the pair of heating blocks are in mechanical contact with each other. The heating element is within the first groove. The first groove and the heating element extend along a length of the heating block assembly. A gas line is within the second groove. The second groove is adjacent to the first groove within the heating block assembly. The temperature-sensing switch is mechanically coupled to the heating block assembly and electrically coupled to the heating element.

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

Abstract: A hollow cathode magnetron comprises an open top target within a hollow cathode. The open top target can be biased to a negative potential so as to form an electric field within the cathode to generate a plasma. The magnetron uses at least one electromagnetic coil to shape and maintain a density of the plasma within the cathode. The magnetron also has an anode located beneath the cathode. The open top target can have one of several different geometries including flat annular, conical and cylindrical, etc.

Abstract: An induction plasma source for integrated circuit fabrication includes an induction coil which defines a generally convex surface. The convex surface may be in the form of a spherical section less than a hemisphere, a paraboloid, or some other smooth convex surface. The windings of the induction coil may be spaced at different intervals in different sections of the coil and may be in multiple layers in at least a portion of the coil. Varying the shape of the coil and the distribution of the coil windings allows the plasma to be shaped in a desired manner.

Abstract: A plasma-enhanced chemical vapor deposition system includes a number of process gas injection tubes and at least one dedicated clean gas injection tube. A plasma is used to periodically clean the interior surfaces of the deposition chamber. The cleaning is made more rapid and effective by introducing the clean gas through the dedicated clean gas injection tube. In this manner the clean gas can be introduced at a relatively high flow rate without detracting from the cleaning of the interior surfaces of the process gas injection tubes. As a separate aspect of this invention, a high-frequency signal is applied to both terminals of the coil during the cleaning process. This produces a plasma, mainly by capacitive coupling, which has a shape and uniformity that are well-suited to cleaning the surfaces of the deposition chamber.

Abstract: A broad area plasma lighting device in which a sealed gas envelope placed adjacent to a planar inductive coupling structure generates visible light. Representative planar inductive coupling structures include a planar spiral coil and a parallel conductor coupling structure. According to the invention, a parallel conductor coupling structure has two basic forms: separate parallel conductors each driven by its own generator/tuning circuit, or single conductor such as a flattened helix or series of square coils driven by one generator/tuning circuit. In addition, a plasma generating device having one or more parallel conductor inductive coupling structures is described. The resulting plasma generator can be used in such applications as plasma processing and inductive plasma lighting.

Abstract: A method is disclosed for the deposition of plasma films in which the optical index of refraction of the deposited film can be varied continuously or discontinuously as the material is deposited. The change in refractive index is accomplished by changing the input power applied to the plasma chamber. The method can be used to create optical wave guides from material of a single input monomer vapor.

Abstract: Plasma polymerized organic films deposited on a substrate exhibit broad bandwidth photoluminescence after excitation with blue, violet, or ultraviolet light. The photoluminescent properties of such organic films may be exploited by using such films as wavelength transformers for photovoltaic materials, as organic solid-state gain media, as process quality control tools, and as color-correcting coatings for fluorescent lamps.

Abstract: A method is disclosed for the deposition of plasma films in which the optical index of refraction of the deposited film can be varied continuously or discontinuously as the material is deposited. The change in refractive index is accomplished by changing the input power applied to the plasma chamber. The method can be used to create optical wave guides from material of a single input monomer vapor.