Patents by Inventor Jeffrey Alan Seifferly

Jeffrey Alan Seifferly has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
    Patent number: 6593655
    Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.
    Type: Grant
    Filed: August 14, 2000
    Date of Patent: July 15, 2003
    Assignee: Dow Corning Corporation
    Inventors: Mark Jon Loboda, Jeffrey Alan Seifferly
  • Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
    Patent number: 6159871
    Abstract: This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.
    Type: Grant
    Filed: May 29, 1998
    Date of Patent: December 12, 2000
    Assignee: Dow Corning Corporation
    Inventors: Mark Jon Loboda, Jeffrey Alan Seifferly