Patents by Inventor Jeffrey ANTHIS
Jeffrey ANTHIS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230313380Abstract: Embodiments of the present disclosure generally relate to protective coatings on aerospace components and methods for depositing the protective coatings. In one or more embodiments, an aerospace component has a body containing a nickel superalloy, a metal oxide template layer disposed on the body, and an aluminum oxide layer disposed between the body of the aerospace component and the metal oxide template layer. The metal oxide template layer contains chromium oxide, chromium oxide hydroxide, or a combination thereof. The aluminum oxide layer contains ?-Al2O3. The metal oxide template layer and the aluminum oxide layer have a corundum crystal structure and have crystal structures with a lattice mismatch of about 0.1% to about 10%.Type: ApplicationFiled: May 22, 2023Publication date: October 5, 2023Inventors: Sukti CHATTERJEE, Kenichi OHNO, Lance A. SCUDDER, Yuriy MELNIK, David A. BRITZ, Pravin K. NARWANKAR, Thomas KNISLEY, Mark SALY, Jeffrey ANTHIS
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Patent number: 11697879Abstract: Embodiments of the present disclosure generally relate to protective coatings on aerospace components and methods for depositing the protective coatings. In one or more embodiments, a method for producing a protective coating on an aerospace component includes depositing a metal oxide template layer on the aerospace component containing nickel and aluminum (e.g., nickel-aluminum superalloy) and heating the aerospace component containing the metal oxide template layer during a thermal process and/or an oxidation process. The thermal process and/or oxidation process includes diffusing aluminum contained within the aerospace component towards a surface of the aerospace component containing the metal oxide template layer, oxidizing the diffused aluminum to produce an aluminum oxide layer disposed between the aerospace component and the metal oxide template layer, and removing at least a portion of the metal oxide template layer while leaving the aluminum oxide layer.Type: GrantFiled: September 4, 2019Date of Patent: July 11, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Sukti Chatterjee, Kenichi Ohno, Lance A. Scudder, Yuriy Melnik, David A. Britz, Pravin K. Narwankar, Thomas Knisley, Mark Saly, Jeffrey Anthis
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Publication number: 20220197146Abstract: Embodiments include a method of forming a metal oxo photoresist on a substrate. In an embodiment, the method comprises providing a target in a vacuum chamber, where the target comprises a metal. The method may continue with flowing a hydrocarbon gas and an inert gas into the vacuum chamber, and striking a plasma in the vacuum chamber. In an embodiment, the method further continues with depositing the metal oxo photoresist on the substrate, where the metal oxo photoresist comprise metal-carbon bonds and metal-oxygen bonds.Type: ApplicationFiled: September 1, 2021Publication date: June 23, 2022Inventors: Lauren Bagby, Stephen Weeks, Aaron Dangerfield, Lakmal Kalutarage, Jeffrey Anthis, Mark Saly, Regina Freed, Wayne French, Kelvin Chan
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Publication number: 20200392626Abstract: Embodiments of the present disclosure generally relate to protective coatings on aerospace components and methods for depositing the protective coatings. In one or more embodiments, a method for producing a protective coating on an aerospace component includes depositing a metal oxide template layer on the aerospace component containing nickel and aluminum (e.g., nickel-aluminum superalloy) and heating the aerospace component containing the metal oxide template layer during a thermal process and/or an oxidation process. The thermal process and/or oxidation process includes diffusing aluminum contained within the aerospace component towards a surface of the aerospace component containing the metal oxide template layer, oxidizing the diffused aluminum to produce an aluminum oxide layer disposed between the aerospace component and the metal oxide template layer, and removing at least a portion of the metal oxide template layer while leaving the aluminum oxide layer.Type: ApplicationFiled: September 4, 2019Publication date: December 17, 2020Inventors: Sukti CHATTERJEE, Kenichi OHNO, Lance A. SCUDDER, Yuriy MELNIK, David A. BRITZ, Pravin K. NARWANKAR, Thomas KNISLEY, Mark SALY, Jeffrey ANTHIS
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Publication number: 20200071816Abstract: Methods for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface are provided including contacting the substrate and metal surface with molybdenum hexacarbonyl to selectively deposit a molybdenum layer atop the metal surface of the substrate, wherein the dielectric layer inhibits deposition of the molybdenum layer atop the dielectric surface. In embodiments, contacting the substrate and metal surface with molybdenum hexacarbonyl is performed at a low temperature such as below 150 degrees Celsius or about 105 to about 125 degrees Celsius.Type: ApplicationFiled: August 30, 2019Publication date: March 5, 2020Inventors: Wei LEI, Jeffrey ANTHIS
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Publication number: 20190148131Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.Type: ApplicationFiled: January 15, 2019Publication date: May 16, 2019Inventors: Abhishek DUBE, Schubert S. CHU, Jessica S. KACHIAN, David THOMPSON, Jeffrey ANTHIS
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Patent number: 10221481Abstract: Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided.Type: GrantFiled: October 24, 2014Date of Patent: March 5, 2019Assignee: MERCK PATENT GMBHInventors: Ravi Kanjolia, Shaun Garratt, David Thompson, Jeffrey Anthis
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Patent number: 10199215Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.Type: GrantFiled: August 23, 2017Date of Patent: February 5, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Abhishek Dube, Schubert S. Chu, Jessica S. Kachian, David Thompson, Jeffrey Anthis
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Publication number: 20180291503Abstract: Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided.Type: ApplicationFiled: October 24, 2014Publication date: October 11, 2018Applicant: SAFC HITECHInventors: Ravi KANJOLIA, Shaun GARRATT, David THOMPSON, Jeffrey ANTHIS
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Publication number: 20170352531Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.Type: ApplicationFiled: August 23, 2017Publication date: December 7, 2017Inventors: Abhishek DUBE, Schubert S. CHU, Jessica S. KACHIAN, David THOMPSON, Jeffrey ANTHIS
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Patent number: 9768013Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.Type: GrantFiled: August 25, 2016Date of Patent: September 19, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Abhishek Dube, Schubert S. Chu, Jessica S. Kachian, David Thompson, Jeffrey Anthis
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Publication number: 20170084449Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.Type: ApplicationFiled: August 25, 2016Publication date: March 23, 2017Inventors: Abhishek DUBE, Schubert S. CHU, Jessica S. KACHIAN, David THOMPSON, Jeffrey ANTHIS
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Patent number: 9528183Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.Type: GrantFiled: April 17, 2014Date of Patent: December 27, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Kai Wu, Bo Zheng, Sang Ho Yu, Avgerinos V. Gelatos, Bhushan N. Zope, Jeffrey Anthis, Benjamin Schmiege
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Publication number: 20160273106Abstract: Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided.Type: ApplicationFiled: October 24, 2014Publication date: September 22, 2016Inventors: Ravi KANJOLIA, Shaun GARRATT, David THOMPSON, Jeffrey ANTHIS
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Publication number: 20140326276Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.Type: ApplicationFiled: April 17, 2014Publication date: November 6, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Kai WU, Bo ZHENG, Sang Ho YU, Avgerinos V. GELATOS, Bhushan N. ZOPE, Jeffrey ANTHIS, Benjamin SCHMIEGE