Patents by Inventor Jeffrey ANTHIS

Jeffrey ANTHIS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200392626
    Abstract: Embodiments of the present disclosure generally relate to protective coatings on aerospace components and methods for depositing the protective coatings. In one or more embodiments, a method for producing a protective coating on an aerospace component includes depositing a metal oxide template layer on the aerospace component containing nickel and aluminum (e.g., nickel-aluminum superalloy) and heating the aerospace component containing the metal oxide template layer during a thermal process and/or an oxidation process. The thermal process and/or oxidation process includes diffusing aluminum contained within the aerospace component towards a surface of the aerospace component containing the metal oxide template layer, oxidizing the diffused aluminum to produce an aluminum oxide layer disposed between the aerospace component and the metal oxide template layer, and removing at least a portion of the metal oxide template layer while leaving the aluminum oxide layer.
    Type: Application
    Filed: September 4, 2019
    Publication date: December 17, 2020
    Inventors: Sukti CHATTERJEE, Kenichi OHNO, Lance A. SCUDDER, Yuriy MELNIK, David A. BRITZ, Pravin K. NARWANKAR, Thomas KNISLEY, Mark SALY, Jeffrey ANTHIS
  • Publication number: 20200071816
    Abstract: Methods for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface are provided including contacting the substrate and metal surface with molybdenum hexacarbonyl to selectively deposit a molybdenum layer atop the metal surface of the substrate, wherein the dielectric layer inhibits deposition of the molybdenum layer atop the dielectric surface. In embodiments, contacting the substrate and metal surface with molybdenum hexacarbonyl is performed at a low temperature such as below 150 degrees Celsius or about 105 to about 125 degrees Celsius.
    Type: Application
    Filed: August 30, 2019
    Publication date: March 5, 2020
    Inventors: Wei LEI, Jeffrey ANTHIS
  • Publication number: 20190148131
    Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.
    Type: Application
    Filed: January 15, 2019
    Publication date: May 16, 2019
    Inventors: Abhishek DUBE, Schubert S. CHU, Jessica S. KACHIAN, David THOMPSON, Jeffrey ANTHIS
  • Patent number: 10221481
    Abstract: Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: March 5, 2019
    Assignee: MERCK PATENT GMBH
    Inventors: Ravi Kanjolia, Shaun Garratt, David Thompson, Jeffrey Anthis
  • Patent number: 10199215
    Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: February 5, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Abhishek Dube, Schubert S. Chu, Jessica S. Kachian, David Thompson, Jeffrey Anthis
  • Publication number: 20180291503
    Abstract: Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided.
    Type: Application
    Filed: October 24, 2014
    Publication date: October 11, 2018
    Applicant: SAFC HITECH
    Inventors: Ravi KANJOLIA, Shaun GARRATT, David THOMPSON, Jeffrey ANTHIS
  • Publication number: 20170352531
    Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.
    Type: Application
    Filed: August 23, 2017
    Publication date: December 7, 2017
    Inventors: Abhishek DUBE, Schubert S. CHU, Jessica S. KACHIAN, David THOMPSON, Jeffrey ANTHIS
  • Patent number: 9768013
    Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.
    Type: Grant
    Filed: August 25, 2016
    Date of Patent: September 19, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Abhishek Dube, Schubert S. Chu, Jessica S. Kachian, David Thompson, Jeffrey Anthis
  • Publication number: 20170084449
    Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.
    Type: Application
    Filed: August 25, 2016
    Publication date: March 23, 2017
    Inventors: Abhishek DUBE, Schubert S. CHU, Jessica S. KACHIAN, David THOMPSON, Jeffrey ANTHIS
  • Patent number: 9528183
    Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: December 27, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kai Wu, Bo Zheng, Sang Ho Yu, Avgerinos V. Gelatos, Bhushan N. Zope, Jeffrey Anthis, Benjamin Schmiege
  • Publication number: 20160273106
    Abstract: Metal complexes containing one or more amidoimine ligands, methods of making such metal complexes, and methods of using such metal complexes to prepare metal-containing films are provided.
    Type: Application
    Filed: October 24, 2014
    Publication date: September 22, 2016
    Inventors: Ravi KANJOLIA, Shaun GARRATT, David THOMPSON, Jeffrey ANTHIS
  • Publication number: 20140326276
    Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.
    Type: Application
    Filed: April 17, 2014
    Publication date: November 6, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kai WU, Bo ZHENG, Sang Ho YU, Avgerinos V. GELATOS, Bhushan N. ZOPE, Jeffrey ANTHIS, Benjamin SCHMIEGE