Patents by Inventor Jeffrey B. Hull

Jeffrey B. Hull has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Systems and Methods for Percutaneous Access and Formation of Arteriovenous Fistulas
    Publication number: 20240099760
    Abstract: A device and method for creating an arteriovenous (AV) fistula includes a proximal base having a distal diagonal end surface and a distal tip connected to the proximal base and movable relative to the proximal base. The distal tip has a proximal diagonal end surface. A heating assembly, including an energized heating element, is disposed one of the distal diagonal end surface and the proximal diagonal end surface. A passive heating assembly is disposed on the mating diagonal end surface. The distal diagonal end surface and the proximal diagonal end surface are adapted to contact opposing sides of a tissue portion to create a fistula. The angle of the proximal diagonal end surface matches the angle of the distal diagonal end surface, so that the two surfaces match one another during deployment.
    Type: Application
    Filed: December 6, 2023
    Publication date: March 28, 2024
    Inventors: Jeffrey E. Hull, David T. Aldridge, Seth A. Foerster, Brad M. Kellerman, Gene B. Reu, Mark A. Ritchart, David K. Wrolstad
  • Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry
    Publication number: 20220157837
    Abstract: A method of forming a vertical transistor comprising a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.
    Type: Application
    Filed: January 31, 2022
    Publication date: May 19, 2022
    Applicant: Micron Technology, Inc.
    Inventors: Hung-Wei Liu, Vassil N, Antonov, Ashonita A. Chavan, Darwin Franseda Fan, Jeffrey B. Hull, Anish A. Khandekar, Masihhur R. Laskar, Albert Liao, Xue-Feng Lin, Manuj Nahar, Irina V. Vasilyeva
  • Methods of semiconductor processing involving forming doped polysilicon on undoped polysilicon
    Patent number: 7943463
    Abstract: A number of methods are provided for semiconductor processing. One such method includes depositing a first precursor material on a surface at a particular temperature to form an undoped polysilicon. The method also includes depositing a second precursor material on a surface of the undoped polysilicon at substantially the same temperature, wherein the undoped polysilicon serves as a seed to accelerate forming a doped polysilicon.
    Type: Grant
    Filed: April 2, 2009
    Date of Patent: May 17, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Anish Khandekar, Ervin T. Hill, Jixin Yu, Jeffrey B. Hull
  • METHODS OF SEMICONDUCTOR PROCESSING INVOLVING FORMING DOPED POLYSILICON ON UNDOPED POLYSILICON
    Publication number: 20100255664
    Abstract: A number of methods are provided for semiconductor processing. One such method includes depositing a first precursor material on a surface at a particular temperature to form an undoped polysilicon. The method also includes depositing a second precursor material on a surface of the undoped polysilicon at substantially the same temperature, wherein the undoped polysilicon serves as a seed to accelerate forming a doped polysilicon.
    Type: Application
    Filed: April 2, 2009
    Publication date: October 7, 2010
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Anish Khandekar, Ervin T. Hill, Jixin Yu, Jeffrey B. Hull