Abstract: A cleaning solution is provided for cleaning metal-containing microelectronic substrates, particularly for post etch, via formation and post CMP cleaning. The cleaning solution consists of a quaternary ammonium hydroxide, an organic amine, and water. A preferred cleaning solution consists of tetramethylammonium hydroxide, monoethanolamine, and water. The pH of cleaning solution is greater than 10.

Abstract: A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post etch, post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of cleaning solution is greater than 10.

Abstract: Determining the presence of a corrosion inhibitor on exposed surfaces during manufacture of a microelectronic device subjected to one or more cleaning operations using a cleaning solution containing a corrosion inhibitor where a subsequent manufacturing or handling step requires no corrosion inhibitor residue on the device. A sacrificial copper test piece or coupon is subjected to the cleaning operation along with the device is exposed to hydrogen sulfide gas. The degree of color change in the surface of the copper test piece is a qualitative means of indicating the presence or absence of a corrosion inhibitor residue on exposed copper surfaces of the microelectronic device.