Patents by Inventor Jeffrey Bernard Fedison

Jeffrey Bernard Fedison has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Four quadrant bidirectional switch
    Patent number: 9130570
    Abstract: A four quadrant bidirectional switch. In one embodiment, the four quadrant bidirectional switch comprises a first switch, a second switch, and a third switch, wherein (i) the first and second switches are normally-off switches, (ii) the third switch is a dual-gate, bidirectional, normally-on switch, and (iii) the first, the second, and the third switches are coupled to one another in a bi-cascode configuration.
    Type: Grant
    Filed: May 10, 2012
    Date of Patent: September 8, 2015
    Assignee: Enphase Energy, Inc.
    Inventors: Martin Fornage, Donald Richard Zimmanck, Jeffrey Bernard Fedison
  • FOUR QUADRANT BIDIRECTIONAL SWITCH
    Publication number: 20120287688
    Abstract: A four quadrant bidirectional switch. In one embodiment, the four quadrant bidirectional switch comprises a first switch, a second switch, and a third switch, wherein (i) the first and second switches are normally-off switches, (ii) the third switch is a dual-gate, bidirectional, normally-on switch, and (iii) the first, the second, and the third switches are coupled to one another in a bi-cascode configuration.
    Type: Application
    Filed: May 10, 2012
    Publication date: November 15, 2012
    Applicant: Enphase Energy, Inc.
    Inventors: Martin Fornage, Donald Richard Zimmanck, Jeffrey Bernard Fedison
  • Homoepitaxial gallium-nitride-based electronic devices and method for producing same
    Patent number: 8089097
    Abstract: There is provided an electronic device. The electronic device includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2. A method of forming an electronic device is also provided. The method includes providing a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2, and homoepitaxially forming at least one semiconductor layer on the substrate.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: January 3, 2012
    Assignee: Momentive Performance Materials Inc.
    Inventors: Mark Phillip D'Evelyn, Nicole Andrea Evers, An-Ping Zhang, Jesse Berkley Tucker, Jeffrey Bernard Fedison
  • Integrated devices with optical and electrical isolation and method for making
    Patent number: 7285433
    Abstract: The invention is directed to a method for optical and electrical isolation between adjacent integrated devices. The method comprises the steps of forming at least one trench through an exposed surface of a semiconductor wafer by removing a portion of the semiconductor wafer material, forming an electrically insulating layer on the sidewalls and the bottom of the at least one trench, filling the at least one trench by conformally depositing an optically isolating material, and planarizing the semiconductor wafer surface by removing the portion of the optically isolating material above the exposed surface of the semiconductor wafer.
    Type: Grant
    Filed: November 6, 2003
    Date of Patent: October 23, 2007
    Assignee: General Electric Company
    Inventors: James William Kretchmer, Jeffrey Bernard Fedison, Dal Marius Brown, Peter Micah Sandvik
  • Static induction transistor
    Patent number: 7187021
    Abstract: A transistor switch for a system operating at high frequencies is provided. The transistor switch comprises a graded channel region between a source region and a drain region, the graded channel region configured for providing a low resistance to mobile negative charge carriers moving from the source region to the drain region, wherein the graded channel comprises at least two doping levels.
    Type: Grant
    Filed: December 10, 2003
    Date of Patent: March 6, 2007
    Assignee: General Electric Company
    Inventors: Chayan Mitra, Ramakrishna Rao, Jeffrey Bernard Fedison, Ahmed Elasser
  • Homoepitaxial gallium-nitride-based electronic devices and method for producing same
    Publication number: 20040124435
    Abstract: There is provided an electronic device. The electronic device includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2. A method of forming an electronic device is also provided. The method includes providing a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2, and homoepitaxially forming at least one semiconductor layer on the substrate.
    Type: Application
    Filed: December 27, 2002
    Publication date: July 1, 2004
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Mark Phillip D'Evelyn, Nicole Andrea Evers, An-Ping Zhang, Jesse Berkley Tucker, Jeffrey Bernard Fedison