Abstract: An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.

Abstract: An electrode assembly includes a distribution plate having a plurality of grooves that communicate with openings in an overlying polishing pad layer. The grooves include end openings that allow for draining of process solution, both during processing and subsequent cleaning/rinsing of the pad. Drainage occurs continually during processing, cleaning and rinsing, and so is constricted through the end openings relative to the grooves, to prevent wastage. The end openings are sufficiently large, however, to substantially completely drain fluids from the grooves between steps without delaying robotic motions.

Abstract: An electrode assembly includes a distribution plate having a plurality of grooves that communicate with openings in an overlying polishing pad layer. The grooves include end openings that allow for draining of process solution, both during processing and subsequent cleaning/rinsing of the pad. Drainage occurs continually during processing, cleaning and rinsing, and so is constricted through the end openings relative to the grooves, to prevent wastage. The end openings are sufficiently large, however, to substantially completely drain fluids from the grooves between steps without delaying robotic motions.

Abstract: The present invention relates to semiconductor integrated circuit technology and discloses an electrochemical mechanical processing system for uniformly distributing an applied force to a workpiece surface. The system includes a workpiece carrier for positioning or holding the workpiece surface and a workpiece-surface-influencing-device (WSID). The WSID is used to uniformly distribute the applied force to the workpiece surface and includes various layers that are used to process and apply a uniform and global force to the workpiece surface.

Abstract: An electrochemical mechanical process for electroplating or electropolishing a conductive surface of a wafer is provided. The conductive surface of the wafer is touched by a polishing surface of a compressible pad while a process solution flows through the pad and a potential difference is maintained between the conductive surface and an electrode. The pressure between the polishing surface and a central region of the conductive surface is increased by applying a shaping process to either the conductive surface or the pad.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: An electrochemical mechanical process for electroplating or electropolishing a conductive surface of a wafer is provided. The conductive surface of the wafer is touched by a polishing surface of a compressible pad while a process solution flows through the pad and a potential difference is maintained between the conductive surface and an electrode. The pressure between the polishing surface and a central region of the conductive surface is increased by applying a shaping process to either the conductive surface or the pad.

Abstract: Methods and systems are provided to eliminate bubble entrapment during electrochemical processing of a substrate, wherein a rigid plate with fluid openings allow process solution to flow between the front surface of the substrate and an electrode. The plate includes a protruding region. In operation, the protruding region causes a raised solution surface to touch the front surface of the wafer prior to complete immersion of the substrate in the solution. In other embodiments, the raised surface of the solution can be provided by applying pressure to a flexible pad or other workpiece surface influencing device (WSID).

Abstract: In one aspect, the present invention monitors a signal corresponding to a torque value of a motor that is used to maintain relative motion between a conductive top surface of a workpiece and a workpiece surface influencing device in the presence of physical contact between the conductive top surface of the workpiece and the workpiece surface influencing device. In another aspect, the present invention uses the signal to control a force applied to a top conductive surface of a workpiece during electrotreatment.

Abstract: In one aspect, the present invention monitors a signal corresponding to a torque value of a motor that is used to maintain relative motion between a conductive top surface of a workpiece and a workpiece surface influencing device in the presence of physical contact between the conductive top surface of the workpiece and the workpiece surface influencing device. In another aspect, the present invention uses the signal to control a force applied to a top conductive surface of a workpiece during electrotreatment.

Abstract: An electrochemical mechanical process for electroplating or electropolishing a conductive surface of a wafer is provided. The conductive surface of the wafer is touched by a polishing surface of a compressible pad while a process solution flows through the pad and a potential difference is maintained between the conductive surface and an electrode. The pressure between the polishing surface and a central region of the conductive surface is increased by applying a shaping process to either the conductive surface or the pad.

Abstract: A method for removing gas bubbles from a surface of a wafer is provided. Removal process is performed as the wafer surface is placed into a process solution for an electrochemical process. As the wafer surface is placed into the solution and moved towards a pressure barrier placed into the solution, a process solution flow between the wafer surface and the pressure barrier is induced to remove gas bubbles from the wafer surface.

Abstract: In one aspect, the present invention monitors a signal corresponding to a torque value of a motor that is used to maintain relative motion between a conductive top surface of a workpiece and a workpiece surface influencing device in the presence of physical contact between the conductive top surface of the workpiece and the workpiece surface influencing device. In another aspect, the present invention uses the signal to control a force applied to a top conductive surface of a workpiece during electrotreatment.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: The present invention relates to semiconductor integrated circuit technology and discloses an electrochemical mechanical processing system for uniformly distributing an applied force to a workpiece surface. The system includes a workpiece carrier for positioning or holding the workpiece surface and a workpiece-surface-influencing-device (WSID). The WSID is used to uniformly distribute the applied force to the workpiece surface and includes various layers that are used to process and apply a uniform and global force to the workpiece surface.