Abstract: Various chemical structures of precursors for armchair graphene nanoribbons (AGNRs) are disclosed, along with a C method of manufacturing.

Abstract: Methods and memory circuits for altering a magnetic direction of a magnetic memory cell using picosecond electric current pulses are disclosed. One method includes directing a first electric current pulse through the magnetic memory cell that includes a ferrimagnetic material layer to heat the ferrimagnetic material layer to toggle a magnetic direction of the ferrimagnetic material layer from a first magnetic direction to a second magnetic direction.

Abstract: Methods and memory circuits for altering a magnetic direction of a magnetic memory cell using picosecond electric current pulses are disclosed. One method includes directing a first electric current pulse through the magnetic memory cell that includes a ferrimagnetic material layer to heat the ferrimagnetic material layer to toggle a magnetic direction of the ferrimagnetic material layer from a first magnetic direction to a second magnetic direction.

Abstract: A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

Abstract: A nanomagnet having widely tunable anisotropy is disclosed. The disclosed nanomagnet is a magnetic particle with a convex shape having a first magnetically easy axis. The convex shape is modified to include at least one concavity to urge a second magnetically easy axis to form substantially offset from the first magnetically easy axis. In at least one embodiment, the convex shape is also modified to include at least one concavity to urge a second magnetically easy axis to form with a magnetic strength substantially different from the first magnetically easy axis.

Abstract: A nanomagnet having widely tunable anisotropy is disclosed. The disclosed nanomagnet is a magnetic particle with a convex shape having a first magnetically easy axis. The convex shape is modified to include at least one concavity to urge a second magnetically easy axis to form substantially offset from the first magnetically easy axis. In at least one embodiment, the convex shape is also modified to include at least one concavity to urge a second magnetically easy axis to form with a magnetic strength substantially different from the first magnetically easy axis.

Abstract: Fabrication methods disclosed herein provide for a nanoscale structure or a pattern comprising a plurality of nanostructures of specific predetermined position, shape and composition, including nanostructure arrays having large area at high throughput necessary for industrial production. The resultant nanostracture patterns are useful for nanostructure arrays, specifically sensor and catalytic arrays.

Abstract: A nanomagnetic flip-flop, or register. The nanomagnetic register receives a signal from an input signal nanomagnet on a first clock cycle, and provides the input to an output signal nanomagnet on a second clock cycle. The input signal nanomagnet and the output signal nanomagnet are arranged on a substrate. Each of the signal nanomagnets has an easy axis and a hard axis that are substantially in a signal plane. A register nanomagnet is arranged on the substrate between the input signal nanomagnet and the output signal nanomagnet. The register nanomagnet has an easy axis and a hard axis that are substantially in a register plane. The register plane is not coplanar with the signal plane.

Abstract: A method and system for propagating signals along a line of nanomagnets. Nanomagnets having an easy axis and a hard axis are provided a biaxial anisotropy term, which increases metastability along the hard axis. The nanomagnets are forced into hard-axis alignment. A magnetization direction of a first nanomagnet is caused to cant upward. Dipole coupling interactions between the first nanomagnet and an adjacent nanomagnet cause a magnetization direction of the adjacent nanomagnet to cant downward in an anti-parallel alignment. This cascade continues reliably along the line of nanomagnets. The biaxial anisotropy term provides additional stability along the hard axis to ensure the nanomagnets do not prematurely align along the easy axis. Various logic gates using nanomagnets, stabilizer nanomagnets, destabilizer nanomagnets, and magnetic diodes are also disclosed.

Abstract: Fabrication methods disclosed herein provide for a nanoscale structure or a pattern comprising a plurality of nanostructures of specific predetermined position, shape and composition, including nanostructure arrays having large area at high throughput necessary for industrial production. The resultant nanostracture patterns are useful for nanostructure arrays, specifically sensor and catalytic arrays.

Abstract: An improved phase-shifting point diffraction interferometer can measure both distortion and wavefront aberration. In the preferred embodiment, the interferometer employs an object-plane pinhole array comprising a plurality of object pinholes located between the test optic and the source of electromagnetic radiation and an image-plane mask array that is positioned in the image plane of the test optic. The image-plane mask array comprises a plurality of test windows and corresponding reference pinholes, wherein the positions of the plurality of pinholes in the object-plane pinhole array register with those of the plurality of test windows in image-plane mask array. Electromagnetic radiation that is directed into a first pinhole of object-plane pinhole array thereby creating a first corresponding test beam image on the image-plane mask array.

Abstract: An at-wavelength system for extreme ultraviolet lithography mask blank defect detection is provided. When a focused beam of wavelength 13 nm is incident on a defective region of a mask blank, three possible phenomena can occur. The defect will induce an intensity reduction in the specularly reflected beam, scatter incoming photons into an off-specular direction, and change the amplitude and phase of the electric field at the surface which can be monitored through the change in the photoemission current. The magnitude of these changes will depend on the incident beam size, and the nature, extent and size of the defect. Inspection of the mask blank is performed by scanning the mask blank with 13 nm light focused to a spot a few &mgr;m in diameter, while measuring the reflected beam intensity (bright field detection), the scattered beam intensity (dark-field detection) and/or the change in the photoemission current.

Abstract: A method for performing scanned defect inspection of a collection of contiguous areas using a specified false-alarm-rate and capture-rate within an inspection system that has characteristic seek times between inspection locations. The multi-stage method involves setting an increased false-alarm-rate for a first stage of scanning, wherein subsequent stages of scanning inspect only the detected areas of probable defects at lowered values for the false-alarm-rate. For scanning inspection operations wherein the seek time and area uncertainty is favorable, the method can substantially increase inspection throughput.

Abstract: A FinFET device is fabricated using conventional planar MOSFET technology. The device is fabricated in a silicon layer overlying an insulating layer (e.g., SIMOX) with the device extending from the insulating layer as a fin. Double gates are provided over the sides of the channel to provide enhanced drive current and effectively suppress short channel effects. A plurality of channels can be provided between a source and a drain for increased current capacity. In one embodiment two transistors can be stacked in a fin to provide a CMOS transistor pair having a shared gate.

Abstract: A vacuum photodetector has been fabricated in a coplanar microstrip transmission line geometry to achieve high quantum efficiency and picosecond response time. The coplanar microstrip transmission lines, photocathode and anode, are mounted on an insulating substrate such as sapphire and are electrically biased with respect to each other. Photodetection occurs by classical photoelectric emission as a result of impinging photon energies exceeding the work function of the photocathode.

Abstract: Apparatus for measuring the voltage waveform on the metallization lines of an integrated circuit is described. Short high powered pulses of light are coupled from a laser and focused on the metallization line of the integrated circuit which is coupled to receive a voltage waveform that is synchronized to the output laser pulses. Electrons are emitted from the metallization line due to the multiphoton photoelectronic effect induced by the pulses of light. An electron energy analyzer having a uniform extraction grid as its most remote element is positioned with the extraction grid as close as possible to the integrated circuit and the laser pulses are focused through one of the holes of this uniform grid. An output circuit is connected in a feedback arrangement which receives the output pulses of the energy analyzer and develops a voltage on a second uniform grid called the retarding grid that is positioned a predetermined distance from the extraction grid inside the electron energy analyzer.