Abstract: A method of using a resonant cavity for measuring a complex permittivity ? and identifying of a sample (solid or liquid) of microliter volume size includes using a network analyzer to measure over a defined millimeter wave frequency range, a first resonance frequency at a cavity resonance mode, and calculating an unloaded quality factor of an enclosed resonant waveguide cavity of a defined internal dimensions, placing a sample on a surface of a bottom wall of the resonant waveguide cavity and measure a second resonance frequency and calculating a loaded quality factor; determining, a resonance frequency shift ?f=(fs?fo), determining a complex permittivity ? of the sample according to the resonance frequency shift ?f, the loaded quality factor, the unloaded quality factor and the defined internal dimensions; and identifying the sample using a database through the complex permittivity ?.

Abstract: The present disclosure is directed to a measurement system for measuring a reflection coefficient of a test sample, including: a transceiver antenna configured to be coupled to a source of electromagnetic radiation; and a RAM positioned between the transceiver antenna and a measurement region of the transceiver antenna, wherein the RAM comprises an aperture substantially orthogonal to and substantially aligned with a transceiving axis of the transceiver antenna. A method for obtaining error correction of a measurement system and a method of measuring a reflection coefficient in a test sample are also provided.

Abstract: The present disclosure is directed to a measurement system for measuring a reflection coefficient of a test sample, including: a transceiver antenna configured to be coupled to a source of electromagnetic radiation; and a RAM positioned between the transceiver antenna and a measurement region of the transceiver antenna, wherein the RAM comprises an aperture substantially orthogonal to and substantially aligned with a transceiving axis of the transceiver antenna. A method for obtaining error correction of a measurement system and a method of measuring a reflection coefficient in a test sample are also provided.

Abstract: The present disclosure is directed to a measurement system for measuring a reflection coefficient of a test sample, including: a transceiver antenna configured to be coupled to a source of electromagnetic radiation; and a RAM positioned between the transceiver antenna and a measurement region of the transceiver antenna, wherein the RAM comprises an aperture substantially orthogonal to and substantially aligned with a transceiving axis of the transceiver antenna. A method for obtaining error correction of a measurement system and a method of measuring a reflection coefficient in a test sample are also provided.

Abstract: The present disclosure is directed to a measurement system for measuring a reflection coefficient of a test sample, including: a transceiver antenna configured to be coupled to a source of electromagnetic radiation; and a RAM positioned between the transceiver antenna and a measurement region of the transceiver antenna, wherein the RAM comprises an aperture substantially orthogonal to and substantially aligned with a transceiving axis of the transceiver antenna. A method for obtaining error correction of a measurement system and a method of measuring a reflection coefficient in a test sample are also provided.

Abstract: The present disclosure is directed to an artificial skin having a radar absorbing layer and a conductive layer containing an electrically conductive material, wherein the artificial skin has a reflection coefficient substantially equal to a human skin reflection coefficient, the human skin reflection coefficient being determined at an electromagnetic radiation frequency ranging from 1-500 GHz. A human phantom composed of the artificial skin and methods of testing the contrast resolution sufficiency of and active millimeter wave imaging system using the human phantom are also disclosed.

Abstract: A method, a resonant cavity and a system for measuring a complex permittivity a and identifying of a sample (solid or liquid) of microliter volume size is disclosed. The method including using a network analyzer to measure over a defined millimeter wave frequency range, a first resonance frequency at a cavity resonance mode, and calculating an unloaded quality factor of an enclosed resonant waveguide cavity of a defined internal dimensions, placing a sample on a surface of a bottom wall of the resonant waveguide cavity and measure a second resonance frequency and calculating a loaded quality factor; determining, a resonance frequency shift ?f=(fs?fo), determining a complex permittivity ? of the sample according to the resonance frequency shift ?f, the loaded quality factor, the unloaded quality factor and the defined internal dimensions; and identifying the sample using a database through the complex permittivity ?.

Abstract: The present disclosure is directed to a measurement system for measuring a reflection coefficient of a test sample, including: a transceiver antenna configured to be coupled to a source of electromagnetic radiation; and a RAM positioned between the transceiver antenna and a measurement region of the transceiver antenna, wherein the RAM comprises an aperture substantially orthogonal to and substantially aligned with a transceiving axis of the transceiver antenna. A method for obtaining error correction of a measurement system and a method of measuring a reflection coefficient in a test sample are also provided.

Abstract: The present disclosure is directed to a contrast phantom having a first region with a first reflection coefficient, a second region with a second reflection coefficient, and a third region with a third reflection coefficient, wherein the first reflection coefficient, the second reflection coefficient and the third reflection coefficient are increasing or decreasing in value in discrete steps, and wherein at least one of the regions includes an electrically conductive material having a thickness of about 200 ?m. Methods of testing the contrast resolution of an active millimeter wave imaging system using the contrast phantom are also described.

Abstract: The present disclosure is directed to an artificial skin having a radar absorbing layer and a conductive layer containing an electrically conductive material, wherein the artificial skin has a reflection coefficient substantially equal to a human skin reflection coefficient, the human skin reflection coefficient being determined at an electromagnetic radiation frequency ranging from 1-500 GHz. A human phantom composed of the artificial skin and methods of testing the contrast resolution sufficiency of and active millimeter wave imaging system using the human phantom are also disclosed.

Abstract: The present disclosure is directed to a contrast phantom having a first region with a first reflection coefficient, a second region with a second reflection coefficient, and a third region with a third reflection coefficient, wherein the first reflection coefficient, the second reflection coefficient and the third reflection coefficient are increasing or decreasing in value in discrete steps, and wherein at least one of the regions includes an electrically conductive material having a thickness of about 200 ?m. Methods of testing the contrast resolution of an active millimeter wave imaging system using the contrast phantom are also described.

Abstract: The present disclosure is directed to an artificial skin including: a radar absorbing layer; a conductive layer comprising at least one material selected from the group consisting of a semiconductive oxide deposited onto a substrate and an electrically conductive polymer, wherein the substrate is in contact with the radar absorbing layer, and wherein the artificial skin has a reflection coefficient substantially equal to a human skin reflection coefficient, the human skin reflection coefficient being determined at an electromagnetic radiation frequency ranging from 1-500 GHz. A human phantom composed of the artificial skin and methods of using the human phantom are also disclosed.

Abstract: The present disclosure is directed to a contrast phantom including: at least three regions including: a first region with a first reflection coefficient; a second region with a second reflection coefficient; and a third region with a third reflection coefficient, wherein at least one of the regions includes an electrically conductive material selected from a semiconductive oxide deposited onto a substrate and/or an electrically conductive polymer, wherein the first reflection coefficient, the second reflection coefficient and the third reflection coefficient are increasing or decreasing in value in discrete steps, and wherein the electrically conductive material includes a thickness of about 200 ?m. Methods of using the present contrast phantom are also described.

Abstract: The present disclosure is directed to an artificial skin including: a radar absorbing layer; a conductive layer comprising at least one material selected from the group consisting of a semiconductive oxide deposited onto a substrate and an electrically conductive polymer, wherein the substrate is in contact with the radar absorbing layer, and wherein the artificial skin has a reflection coefficient substantially equal to a human skin reflection coefficient, the human skin reflection coefficient being determined at an electromagnetic radiation frequency ranging from 1-500 GHz. A human phantom composed of the artificial skin and methods of using the human phantom are also disclosed.

Abstract: The present disclosure is directed to a contrast phantom including: at least three regions including: a first region with a first reflection coefficient; a second region with a second reflection coefficient; and a third region with a third reflection coefficient, wherein at least one of the regions includes an electrically conductive material selected from a semiconductive oxide deposited onto a substrate and/or an electrically conductive polymer, wherein the first reflection coefficient, the second reflection coefficient and the third reflection coefficient are increasing or decreasing in value in discrete steps, and wherein the electrically conductive material includes a thickness of about 200 ?m. Methods of using the present contrast phantom are also described.

Abstract: The present disclosure is directed to a measurement system for measuring a reflection coefficient of a test sample, including: a transceiver antenna configured to be coupled to a source of electromagnetic radiation; and a RAM positioned between the transceiver antenna and a measurement region of the transceiver antenna, wherein the RAM comprises an aperture substantially orthogonal to and substantially aligned with a transceiving axis of the transceiver antenna. A method for obtaining error correction of a measurement system and a method of measuring a reflection coefficient in a test sample are also provided.

Abstract: Described herein is a method by which active millimeter wave radiation may be used to detect and identify the composition of concealed metallic, concealed non-metallic, concealed opaque or concealed semi-transparent materials based on their optical properties. By actively radiating a semi-transparent target anomaly with multiple millimeter wave radiation frequencies, the dielectric properties of the target anomaly can be identified. The dielectric properties of the target anomaly may then be compared to a library of dielectric properties attributed to semi-transparent materials of interest. This method will allow active millimeter wave radiation technology to identify the likely composition of targeted semi-transparent materials through absorption and illumination measurements attributed to the dielectric properties of the targeted composition.

Abstract: Described herein is a method by which active millimeter wave radiation may be used to detect and identify the composition of concealed metallic, concealed non-metallic, concealed opaque or concealed semi-transparent materials based on their optical properties. By actively radiating a semi-transparent target anomaly with multiple millimeter wave radiation frequencies, the dielectric properties of the target anomaly can be identified. The dielectric properties of the target anomaly may then be compared to a library of dielectric properties attributed to semi-transparent materials of interest. This method will allow active millimeter wave radiation technology to identify the likely composition of targeted semi-transparent materials through absorption and illumination measurements attributed to the dielectric properties of the targeted composition.