Abstract: Methods for forming die that have minimal edge and surface damage are provided. Die formed by these methods are less susceptible to cracking and breakage. Thus, yield and performance of devices fabricated with die formed by these methods are advantageously improved. To form the die, trenches are formed in a wafer around the peripheral edge of the die by processes that cause only minimal damage to the edges of the die. The wafer is cut through the trenches into sections containing the die without contacting the edge of the die. The sections are then mounted onto a holder and thinned to produce the die.

Abstract: A system and method for isothermally growing HgCdTe having improved material uniformity and run-to-run repeatability employs a growth solution vessel in which a substrate may be inserted. The growth solution is heated and maintained at a constant temperature while causing Hg to vaporize and rise within the growth solution vessel. A water-cooling jacket causes the Hg to condense and form on the walls of the growth solution vessel. The Hg condensate is directed into a calibrated reservoir. HgCdTe growth continues as the Hg is depleted from the growth solution and fills the reservoir. The reservoir is calibrated to hold the specific amount of Hg condensate corresponding to the desired layer of HgCdTe. The reservoir overflows when full and directs the overflow into the growth solution, causing HgCdTe formation to cease. The volume of the reservoir may be altered to capture more or less Hg condensate, as desired, in order to change the amount of HgCdTe formed on the CdTe substrate.