Abstract: An apparatus includes, among other things, a spare tire cover comprising an attaching ring configured to surround an outer circumference of a tire and a center panel that is attached to the attaching ring. At least one exciter is mounted to the center panel. A method includes, among other things, molding at least one temperature sensor to a center panel, mounting the center panel to enclose one open side of an attaching ring to form a spare tire cover, and mounting at least one exciter to the center panel to selectively generate a desired sound.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.