Abstract: Light emitter packages, systems, and methods having improved performance are disclosed. In one aspect, a light emitter package can include a submount that can include an anode and a cathode. A light emitter chip can be disposed over the submount such that the light emitter chip is mounted over at least a portion of the cathode and wirebonded to at least a portion of the anode.

Abstract: LED packages and related methods are provided. The LED packages can include a submount having a top and bottom surface and a plurality of top electrically conductive elements on the top surface of the submount. An LED can be disposed on one of the top electrically conductive elements. The LED can emit a dominant wavelength generally between approximately 600 nm and approximately 650 nm, and more particularly between approximately 610 nm and approximately 630 nm when an electrical signal is applied to the top electrically conductive elements. A bottom thermally conductive element can be provided on the bottom surface and is not in electrical contact with the top electrically conductive elements. A lens can be disposed over the LED. The LED packages can have improved lumen performances, lower thermal resistances, improved efficiencies, and longer operational lifetimes.

Abstract: Light emitting diode (LED) packages and methods are disclosed herein. In one aspect, a light emitting package is disclosed. The light emitting package includes one or more areas of conductive material having a thickness of less than approximately 50 microns (?m). The package can further include at least one light emitting diode (LED) electrically connected to the conductive material and at least one thin gap disposed between areas of conductive material.

Abstract: Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 ?m is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.

Abstract: Solid state (e.g., LED) lighting devices include multiple emitters mounted on or over a substrate comprising insulating material with conductive traces thereon, with various emitters being independently controllable with multiple pairs of anodes and cathodes that may be arranged on an opposite surface of the substrate than the emitters. Electrically conductive vias may be defined through the insulating substrate, and a molded lens may be provided over the substrate and emitters mounted thereon. Various combinations of independently controllable emitters or emitter groups may be provided, for example, a red emitter in combination with multiple blue shifted yellow (BSY) emitters, or separately controllable red, green, blue, and white (e.g., BSY) emitters.

Abstract: High voltage array light emitting devices and fixtures are disclosed. In one embodiment a light emitting device can include a submount, a light emission area disposed over the submount and a retention material adapted to be dispensed about the light emission area. The light emitting device can be operable at high voltages which are greater than approximately 40 volts (V). In one aspect, the retention material can be least partially disposed within the light emission area such that the retention material physically separates a first section of the light emission area from a second section of the light emission area.

Abstract: A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer.

Abstract: High voltage array light emitting devices and fixtures are disclosed. In one embodiment a light emitting device can include a submount, a light emission area disposed over the submount and a retention material adapted to be dispensed about the light emission area. The light emitting device can be operable at high voltages which are greater than approximately 40 volts (V). In one aspect, the retention material can be least partially disposed within the light emission area such that the retention material physically separates a first section of the light emission area from a second section of the light emission area.

Abstract: Light emitting devices and methods such as light emitting diodes (LEDs) are disclosed for use in higher voltage applications. Variable arrangements of LEDs are disclosed herein. Arrangements can include one or more LED chips connected in series, parallel, and/or a combination thereof. LED chips can be disposed in a package body having at least one thermal element and one or more electrical components.

Abstract: Light emitter packages, systems, and methods having improved performance are disclosed. In one aspect, a light emitter package can include a submount that can include an anode and a cathode. A light emitter chip can be disposed over the submount such that the light emitter chip is mounted over at least a portion of the cathode and wirebonded to at least a portion of the anode.

Abstract: Solid state (e.g., LED) lighting devices include multiple emitters mounted on or over a substrate comprising insulating material with conductive traces thereon, with various emitters being independently controllable with multiple pairs of anodes and cathodes that may be arranged on an opposite surface of the substrate than the emitters. Electrically conductive vias may be defined through the insulating substrate, and a molded lens may be provided over the substrate and emitters mounted thereon. Various combinations of independently controllable emitters or emitter groups may be provided, for example, a red emitter in combination with multiple blue shifted yellow (BSY) emitters, or separately controllable red, green, blue, and white (e.g., BSY) emitters.

Abstract: Light emitting diode (LED) packages and methods are disclosed herein. In one aspect, a light emitting package is disclosed. The light emitting package includes one or more areas of conductive material having a thickness of less than approximately 50 microns (?m). The package can further include at least one light emitting diode (LED) electrically connected to the conductive material and at least one thin gap disposed between areas of conductive material.

Abstract: Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 ?m is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.

Abstract: LED packages and related methods are provided. The LED packages can include a submount having a top and bottom surface and a plurality of top electrically conductive elements on the top surface of the submount. An LED can be disposed on one of the top electrically conductive elements. The LED can emit a dominant wavelength generally between approximately 600 nm and approximately 650 nm, and more particularly between approximately 610 nm and approximately 630 nm when an electrical signal is applied to the top electrically conductive elements. A bottom thermally conductive element can be provided on the bottom surface and is not in electrical contact with the top electrically conductive elements. A lens can be disposed over the LED. The LED packages can have improved lumen performances, lower thermal resistances, improved efficiencies, and longer operational lifetimes.

Abstract: A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer.

Abstract: A method is disclosed for preparing carrier wafers for semiconductor device manufacture. The method includes the steps of sorting a plurality of standard carrier wafer blanks into batches by thickness to define a batch of starting carrier wafers that are within a predetermined tolerance of one another, reducing the thickness of the sorted carrier wafers to within 10 microns of a final target thickness, and polishing the sorted carrier wafers to the final target thickness. The polished carrier wafers are mounted to device precursor wafers having at least one semiconductor epitaxial layer on a substrate by joining one surface of a carrier wafer to the epitaxial layer on a substrate. The thickness of the device precursor wafer is then reduced by removing material from the device precursor substrate opposite the joined epitaxial layer.