Abstract: Aspects of the present invention include methods for controlling a plasma in a substrate processing system. One embodiment provides controlling a first set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within a chamber before processing a first set of one or more substrates, associating the first set of wavelength intensities of reflected electromagnetic radiation to an RF power within the processing system, adjusting a matching circuit based on the first set of wavelength intensities of reflected electromagnetic radiation, processing the first set of one or more substrates in the substrate processing system, controlling a second set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within the chamber, and associating the second set of wavelength intensities of reflected electromagnetic radiation to the RF power within the processing system.

Abstract: Aspects of the present invention include methods for controlling a plasma in a substrate processing system. One embodiment provides controlling a first set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within a chamber before processing a first set of one or more substrates, associating the first set of wavelength intensities of reflected electromagnetic radiation to an RF power within the processing system, adjusting a matching circuit based on the first set of wavelength intensities of reflected electromagnetic radiation, processing the first set of one or more substrates in the substrate processing system, controlling a second set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within the chamber, and associating the second set of wavelength intensities of reflected electromagnetic radiation to the RF power within the processing system.

Abstract: Aspects of the present invention include methods and apparatuses that may be used for monitoring and adjusting plasma in a substrate processing system by using a plasma data monitoring assembly. In one embodiment, an apparatus for monitoring a plasma in a substrate processing system is provided. The apparatus includes a plasma chamber having a plurality of walls, at least one of the plurality of walls having a dielectric ceiling, at least one inner coil element and at least one outer coil element disposed outside the chamber, a current sensor coupled to one of the inner coil element or the outer coil element, the current sensor adapted to detect current from an inductively coupled plasma generated in the plasma chamber, an RF power source, and one or more adjustable capacitors coupled to each of the one or more coil elements.

Abstract: Aspects of the present invention include methods and apparatuses that may be used for monitoring and adjusting plasma in a substrate processing system by using a plasma data monitoring assembly. For example, an optical instrument adapted to measure properties of light over a specific portion of the electromagnetic spectrum may be used to detect one or more wavelength intensities from the plasma. Then, an electronic device, for example a computer software may analyze the wavelength intensities and a match circuit may then be adjusted. In this way, consistent plasma may be obtained. In other embodiments, the present invention may utilize the relationship between chamber pressure, substrate temperature, coil currents and/or the plasma in order to adjust and maintain a repeatable plasma process.