Abstract: Embodiments provided herein provide systems and methods for wet processing substrates with a rotating splash shield. The systems include a fluid dispenser configured to dispense a processing fluid. A substrate support configured to support and rotate a substrate is also included. The substrate support is disposed such that the processing fluid dispensed by the fluid dispenser flows onto the substrate. A splash shield is positioned on at least one side of the substrate support and is configured to rotate. The splash shield has an upper portion extending above an upper surface of the substrate and a lower portion extending below a lower surface of the substrate.

Abstract: A system and method for providing a plurality of diluted solutions are disclosed. Successive dilution operations are performed upon mixing vessels substantially simultaneously. Measured source volumes of a source solution are placed into the mixing vessels. First measured volumes of a liquid are added to the mixing vessels. Measured first waste volumes are dispensed from the mixing vessels. Second measured volumes of the liquid are added to the mixing vessels. Measured second waste volumes are dispensed from the mixing vessels. Third measured volumes of the liquid are added to the mixing vessels. Each vessel has an individual target dilution ratio. Measured volumes and number of dilution operations are individual to each of the mixing vessels.

Abstract: Multiple waste streams, including incompatible chemicals such as concentrated acids and/or strong base effluents, are handled together without the need for limiting or interrupting the processes run by the wafer processing tools. In some embodiments, waste tanks are primed with diluents, such as water, and a predetermined percentage of diluent is maintained in the waste tanks. In some embodiments, a diluent is flowed into the waste tanks concurrently with the waste pumping to generate a rinsing action for the waste tanks. Methods of the present disclosure accommodate both gravity type and vacuum type waste tanks.

Abstract: Provided are methods and systems for dispensing different chemicals used for high productivity combinatorial processing. A dispense panel may include multiple inlet lines for supplying different chemicals. Each inlet line is connected to its own three-way valve that either allows the supplied chemical to flow from the inlet line towards a dispense valve connected to a dispense manifold (during dispensing of the supplied chemical) or allows another chemical to flow from the dispense valve to a waste manifold (during priming of the dispense manifold with this other chemical). Specifically, during priming a chemical supplied from its inlet line and is passed through a corresponding three-way valve and is directed to its dispense valve and then into the dispense manifold. Other dispense valves and three-way valves of the dispense panel allow this chemical to flow out of the dispense manifold, thereby priming remaining parts of the panel.

Abstract: Methods for combinatorially processing semiconductor substrates are provided. The methods may involve receiving a substrate into a combinatorial processing chamber and sealing a plurality of flow cells against a surface of the substrate. The plurality of flow cells is enclosed within the combinatorial processing chamber to define an enclosed external environment for the plurality of flow cells. A pressure differential is created between a reaction area of the plurality of flow cells of the combinatorial processing chamber and the external environment, wherein each flow cells of the plurality of flow cells defines a site isolating region of the substrate. The regions the substrate are then combinatorially processed.

Abstract: A method for combinatorially processing a substrate is provided. The method includes providing a substrate disposed on a substrate support. The substrate and the substrate support are raised against a plurality of sealing surfaces of corresponding sleeves of a plurality of flow cells of a combinatorial processing chamber. The combinatorial processing chamber is operable to concurrently process different regions of the substrate differently. A sealing pressure between the sealing surface of the sleeves and a surface of the substrate is monitored and the raising is terminated when a desired pressure is obtained. The different regions of the substrate are then processed differently.

Abstract: The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.

Abstract: A system and method for providing a plurality of diluted solutions are disclosed. Successive dilution operations are performed upon mixing vessels substantially simultaneously. Measured source volumes of a source solution are placed into the mixing vessels. First measured volumes of a liquid are added to the mixing vessels. Measured first waste volumes are dispensed from the mixing vessels. Second measured volumes of the liquid are added to the mixing vessels. Measured second waste volumes are dispensed from the mixing vessels. Third measured volumes of the liquid are added to the mixing vessels. Each vessel has an individual target dilution ratio. Measured volumes and number of dilution operations are individual to each of the mixing vessels.

Abstract: A method of combinatorial processing involving etching a first material and a second material on a substrate comprising: etching the first material with a high first etch rate with a first etchant; etching the second material with a high second etch rate with a second etchant, wherein the first etchant and the second etchant are used sequentially without being separated by a rinse.

Abstract: Methods and apparatuses for controlling contamination within processing modules and extending the life of system components within processing modules of combinatorial processing systems are disclosed. Methods include injecting a purging fluid into distribution lines within a processing module after one step of a process recipe. Further, injecting a flushing fluid into the distribution lines after the purging fluid is introduced therein. Furthermore, injecting the purging fluid and the flushing fluid into the fluid distribution line multiple times before initiating a next step of the process recipe. Finally, injecting a purging fluid into the distribution lines before initiating a next process step.

Abstract: Provided are methods and systems for dispensing different chemicals used for high productivity combinatorial processing. A dispense panel may include multiple inlet lines for supplying different chemicals. Each inlet line is connected to its own three-way valve that either allows the supplied chemical to flow from the inlet line towards a dispense valve connected to a dispense manifold (during dispensing of the supplied chemical) or allows another chemical to flow from the dispense valve to a waste manifold (during priming of the dispense manifold with this other chemical). Specifically, during priming a chemical supplied from its inlet line and is passed through a corresponding three-way valve and is directed to its dispense valve and then into the dispense manifold. Other dispense valves and three-way valves of the dispense panel allow this chemical to flow out of the dispense manifold, thereby priming remaining parts of the panel.

Abstract: Methods for combinatorially processing semiconductor substrates are provided. The methods may involve receiving a substrate into a combinatorial processing chamber and sealing a plurality of flow cells against a surface of the substrate. The plurality of flow cells is enclosed within the combinatorial processing chamber to define an enclosed external environment for the plurality of flow cells. A pressure differential is created between a reaction area of the plurality of flow cells of the combinatorial processing chamber and the external environment, wherein each flow cells of the plurality of flow cells defines a site isolating region of die substrate. The regions the substrate are then combinatorially processed.

Abstract: A method of calibrating a flow meter is provided. The method initiates with identifying a calibration fluid for a processing fluid. The calibration fluid has physical properties in common with the processing fluid with the exception of an outgassing characteristic. The method includes adding the calibration fluid to a vessel, where the vessel is in fluid communication with the flow meter and a withdrawal unit. The vessel is pressurized and the calibration fluid is withdrawn from the vessel through the flow meter and into the withdrawal unit, where the withdrawing performed by the withdrawal unit. A withdrawal volume per unit time measured by the flow meter is compared to a withdrawal volume per unit time controlled and set through the withdrawal unit.

Abstract: The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.

Abstract: Multiple waste streams, including incompatible chemicals such as concentrated acids and/or strong base effluents, are handled together without the need for limiting or interrupting the processes run by the wafer processing tools. In some embodiments, waste tanks are primed with diluents, such as water, and a predetermined percentage of diluent is maintained in the waste tanks. In some embodiments, a diluent is flowed into the waste tanks concurrently with the waste pumping to generate a rinsing action for the waste tanks. Methods of the present disclosure accommodate both gravity type and vacuum type waste tanks.

Abstract: A method of measuring the thickness of a one or more layers using ellipsometry is presented which overcomes problems with fitting a model to data collected in the presence of a top surface having a surface roughness (peak-to-trough) greater than about 100 ?. Prior to measurement, the top layer is pretreated to form an oxide layer of thickness between about 15 ? and about 30 ?. Ellipsometry data as a function of wavelength is then collected, and the ellipsometry data is fitted to a model including the oxide layer. For layers of doped polycrystalline silicon layers with a rough surface, the model comprises a layer consisting of a mixture of polycrystalline silicon and amorphous silicon and a top layer consisting of a mixture of polycrystalline silicon and silicon dioxide, and the pretreatment can be performed for about 10 minutes at 600 C in an oxygen atmosphere.

Abstract: A method of calibrating a flow meter is provided. The method initiates with identifying a calibration fluid for a processing fluid. The calibration fluid has physical properties in common with the processing fluid with the exception of an outgassing characteristic. The method includes adding the calibration fluid to a vessel, where the vessel is in fluid communication with the flow meter and a withdrawal unit. The vessel is pressurized and the calibration fluid is withdrawn from the vessel through the flow meter and into the withdrawal unit, where the withdrawing performed by the withdrawal unit. A withdrawal volume per unit time measured by the flow meter is compared to a withdrawal volume per unit time controlled and set through the withdrawal unit.

Abstract: A method for combinatorially processing a substrate is provided. The method includes providing a substrate disposed on a substrate support. The substrate and the substrate support are raised against a plurality of sealing surfaces of corresponding sleeves of a plurality of flow cells of a combinatorial processing chamber. The combinatorial processing chamber is operable to concurrently process different regions of the substrate differently. A sealing pressure between the sealing surface of the sleeves and a surface of the substrate is monitored and the raising is terminated when a desired pressure is obtained. The different regions of the substrate are then processed differently.

Abstract: Biased plasma etch processes incorporating H2 etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.